SYSTEMS AND METHODS FOR THIN-FILM DEPOSITION OF METAL OXIDES USING EXCITED NITROGEN-OXYGEN SPECIES
First Claim
1. A method for depositing a film on a substrate that is within a reaction chamber, the method comprising applying an atomic layer deposition cycle to the substrate, the cycle comprising:
- exposing the substrate to a precursor gas for a precursor pulse interval then removing the precursor gas thereafter; and
exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval then removing the oxidizer thereafter.
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Abstract
Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas thereafter, and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval and then removing the oxidizer thereafter. Aspects of the present invention utilize molecular and excited nitrogen-oxygen radical/ionic species in possible further combination with oxidizers such as ozone. Embodiments of the present invention also include electronic components and systems that include devices fabricated with methods consistent with the present invention.
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Citations
23 Claims
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1. A method for depositing a film on a substrate that is within a reaction chamber, the method comprising applying an atomic layer deposition cycle to the substrate, the cycle comprising:
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exposing the substrate to a precursor gas for a precursor pulse interval then removing the precursor gas thereafter; and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval then removing the oxidizer thereafter. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 23)
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- 19. A method comprising depositing a metal oxide at least one of in any film stack using a metal halide precursor and an oxidant comprising ozone and excited nitrogen-oxygen species.
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22. A method for depositing a film on a substrate comprising controlling uniformity of deposition of the deposited film by adjusting an amount of an active nitrogen-oxygen species exposed to the substrate.
Specification