HEAT TREATMENT APPARATUS, HEAT TREATMENT METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• US 20110070692A1
• Filed: 09/23/2010
• Published: 03/24/2011
• Est. Priority Date: 09/24/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Narita, Akihiro, Moriwaka, Tomoaki, Ohnuma, Hideto, Yamazaki, Shunpei
• Granted Patent: US 8,440,941 B2
• Time in Patent Office: Days
• US Class Current: 438/104
• CPC Class Codes: F27B 17/0025 Especially adapted for treating semiconductor wafers
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/6719 characterized by the construction of the processing chambers, e.g. modular processing chambers

Abstract

Provided is a heat treatment apparatus in which a large-sized substrate can be rapidly heated and rapidly cooled with high uniformity, and a heat treatment method using the heat treatment apparatus. The heat treatment apparatus includes: a first chamber of which one side is opened; a second chamber of which one side is opened; a device for moving the first and the second chambers; a heating device; a gas introduction port; a gas exhaust port; and a jig for longitudinally fixing a substrate, in which the substrate is rapidly heated while the first and the second chambers are connected, and rapidly cooled by separating the chambers to move the substrate away from a heat storage portion of the heating device or the like. Further, the heat treatment method includes the heat treatment apparatus, and a method for manufacturing a semiconductor device using an oxide semiconductor is included.

Claims

1. A heat treatment apparatus comprising:

a first chamber of which one side is opened;

a second chamber of which one side is opened;

a device for moving the first chamber and the second chamber;

a heating device provided in at least one of the first chamber and the second chamber;

a gas introduction port provided in at least one of the first chamber and the second chamber;

a gas exhaust port provided in at least one of the first chamber and the second chamber; and

a fixing jig of a substrate provided in at least one of the first chamber and the second chamber,

wherein the open side of the first chamber and the open side of the second chamber face each other.

2. The heat treatment apparatus according to claim 1, wherein the heating device selected from one of a resistance heater, a lamp heater, and a unit using a heated gas is used.

3. The heat treatment apparatus according to according to claim 1, wherein the gas exhaust port is connected to a gas refining apparatus.

4. The heat treatment apparatus according to claim 1, wherein the fixing jig of a substrate is a Bernoulli Chuck.

5. The heat treatment apparatus according to claim 1, wherein the fixing jig of a substrate includes a jig for holding an end portion of the substrate.

6. The heat treatment apparatus according to claim 5, wherein the jig for holding an end portion of the substrate has a function of holding a plurality of substrates in a stack with intervals.

7. A heat treatment apparatus, comprising:

a first chamber of which one side is opened;

a second chamber of which one side is opened;

a device for moving the first chamber and the second chamber;

a heating device provided in at least one of the first chamber and the second chamber;

a gas introduction port;

a gas exhaust port;

a fixing jig of a substrate; and

a third chamber in which the first chamber, the second chamber, the device for moving the first chamber and the second chamber, the heating device, the gas introduction port, the gas exhaust port and the fixing jig are installed,

wherein the open side of the first chamber and the open side of the second chamber face each other, and

wherein the third chamber has an opening and closing apparatus.

8. The heat treatment apparatus according to claim 7, wherein the heating device selected from one of a resistance heater, a lamp heater, and a unit using a heated gas is used.

9. The heat treatment apparatus according to according to claim 7, wherein the gas exhaust port is connected to a gas refining apparatus.

10. The heat treatment apparatus according to claim 7, wherein the fixing jig of a substrate is a Bernoulli Chuck.

11. The heat treatment apparatus according to claim 7, wherein the fixing jig of a substrate includes a jig for holding an end portion of the substrate.

12. The heat treatment apparatus according to claim 11, wherein the jig for holding an end portion of the substrate has a function of holding a plurality of substrates in a stack with intervals.

13. A heat treatment method comprising the steps of:

setting a substrate in a fixing jig;

disposing one side of a first chamber which is opened and one side of a second chamber which is opened to face each other so as to form a connected chamber to confine the substrate;

replacing an atmosphere in the connected chamber with an inert gas;

heating the substrate using a heating device; and

separating the connected chamber into the first chamber and the second chamber to be opened and cooling the substrate.

14. The heat treatment method according to claim 13, wherein the heating device selected from one of a resistance heater, a lamp heater, and a unit using a heated gas is used.

15. The heat treatment method according to claim 13, wherein the fixing jig of a substrate is a Bernoulli Chuck.

16. The heat treatment method according to claim 13, wherein the fixing jig of a substrate includes a jig for holding an end portion of a substrate.

17. The heat treatment method according to claim 16, wherein the jig for holding an end portion of the substrate has a function of holding a plurality of substrates in a stack with intervals.

18. The heat treatment method according to claim 13, wherein the inert gas is selected from one of nitrogen, helium, neon, and argon.

19. A heat treatment method comprising the steps of:

setting a substrate in a fixing jig to be inclined from a perpendicular position with respect to a bottom of a heat treatment apparatus;

disposing one side of a first chamber which is opened and one side of a second chamber which is opened to face each other so as to form a connected chamber to confine the substrate;

replacing an atmosphere in the connected chamber with an inert gas;

heating the substrate using a heating device; and

separating the connected chamber into the first chamber and the second chamber to be opened and cooling the substrate.

20. The heat treatment method according to claim 19, wherein the heating device selected from one of a resistance heater, a lamp heater, and a unit using a heated gas is used.

21. The heat treatment method according to claim 19, wherein the fixing jig of a substrate is a Bernoulli Chuck.

22. The heat treatment method according to claim 19, wherein the fixing jig of a substrate includes a jig for holding an end portion of a substrate.

23. The heat treatment method according to claim 22, wherein the jig for holding an end portion of the substrate has a function of holding a plurality of substrates in a stack with intervals.

24. The heat treatment method according to claim 19, wherein the inert gas is selected from one of nitrogen, helium, neon, and argon.

25. The heat treatment method according to claim 19, wherein an angle at which the substrate is inclined is higher than or equal to −

30° and

lower than or equal to +30°

.

26. A method for manufacturing a semiconductor device comprising the steps of:

forming a gate electrode layer over a substrate;

forming a gate insulating layer over the gate electrode layer;

forming an oxide semiconductor layer over the gate insulating layer;

setting a substrate over which the oxide semiconductor layer is formed in a fixing jig of a substrate;

disposing one side of a first chamber which is opened and one side of a second chamber which is opened to face each other so as to form a connected chamber to confine the substrate;

replacing an atmosphere in the connected chamber with an inert gas;

heating the substrate using a heating device;

separating the connected chamber into the first chamber and the second chamber to be opened and cooling the substrate so that dehydration or dehydrogenation of the oxide semiconductor layer is performed;

forming a source electrode layer or a drain electrode layer over the oxide semiconductor layer, and

forming an oxide insulating layer in contact with the oxide semiconductor layer.

27. The method for manufacturing a semiconductor device according to claim 26, wherein the heating device selected from one of a resistance heater, a lamp heater, and a unit using a heated gas is used

28. The method for manufacturing a semiconductor device according to claim 26, wherein the fixing jig of a substrate is a Bernoulli Chuck.

29. The method for manufacturing a semiconductor device according to claim 26, wherein the fixing jig of a substrate includes a jig which holds an end portion of a substrate

30. The method for manufacturing a semiconductor device according to claim 29, wherein the jig for holding an end portion of a substrate has a function of holding a plurality of substrates in a stack with intervals.

31. The method for manufacturing a semiconductor device according to claim 26, wherein the inert gas is selected from one of nitrogen, helium, neon, and argon.

32. The method for manufacturing a semiconductor device according to claim 31, wherein a dew point of the inert gas is −

50°

C. or lower.

33. A method for manufacturing a semiconductor device comprising the steps of:

forming a gate electrode layer over a substrate;

forming a gate insulating layer over the gate electrode layer;

forming a source electrode layer and a drain electrode layer;

forming an oxide semiconductor layer over the source electrode layer and the drain electrode layer;

setting a substrate over which the oxide semiconductor layer is formed in a fixing jig of a substrate;

disposing one side of a first chamber which is opened and one side of a second chamber which is opened to face each other so as to form a connected chamber to confine the substrate;

replacing an atmosphere in the connected chamber with an inert gas;

heating the substrate using a heating device;

separating the connected chamber into the first chamber and the second chamber to be opened and cooling the substrate so that dehydration or dehydrogenation of the oxide semiconductor layer is performed; and

forming an oxide insulating layer in contact with the oxide semiconductor layer.

34. The method for manufacturing a semiconductor device according to claim 33, wherein the heating device selected from one of a resistance heater, a lamp heater, and a unit using a heated gas is used

35. The method for manufacturing a semiconductor device according to claim 33, wherein the fixing jig of a substrate is a Bernoulli Chuck.

36. The method for manufacturing a semiconductor device according to claim 33, wherein the fixing jig of a substrate includes a jig which holds an end portion of a substrate

37. The method for manufacturing a semiconductor device according to claim 36, wherein the jig for holding an end portion of a substrate has a function of holding a plurality of substrates in a stack with intervals.

38. The method for manufacturing a semiconductor device according to claim 33, wherein the inert gas is selected from one of nitrogen, helium, neon, and argon.

39. The method for manufacturing a semiconductor device according to claim 38, wherein a dew point of the inert gas is −

50°

C. or lower.