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METHOD FOR MANUFACTURING OXIDE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20110070693A1
  • Filed: 09/23/2010
  • Published: 03/24/2011
  • Est. Priority Date: 09/24/2009
  • Status: Active Grant
First Claim
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1. A method for manufacturing an oxide semiconductor film, comprising the steps of:

  • heating a substrate at lower than 400°

    C.;

    introducing a sputtering gas from which hydrogen and moisture are removed into a treatment chamber while moisture remaining in the treatment chamber is removed; and

    forming an oxide semiconductor film over the substrate by a metal oxide as a target,wherein the substrate is held in the treatment chamber kept in a reduced-pressure state.

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