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Method for forming NAND typed memory device

  • US 20110070706A1
  • Filed: 11/30/2010
  • Published: 03/24/2011
  • Est. Priority Date: 11/07/2006
  • Status: Active Grant
First Claim
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1. A method for fabricating a NAND type flash memory device comprising:

  • defining a select transistor region and a memory cell region in a semiconductor substrate;

    forming a tunnel insulating layer, a floating gate conductive layer, and a dielectric layer over the semiconductor substrate;

    etching the dielectric layer, thereby forming an opening exposing the floating gate conductive layer in the select transistor region;

    forming a low resistance layer in the opening;

    forming a control gate conductive layer over the semiconductor substrate; and

    etching the control gate conductive layer, the dielectric layer, the floating gate conductive layer, and the tunnel insulating layer, thereby forming gate stacks of memory cells and source/drain select transistors.

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