METHOD OF CLEANING PLASMA ETCHING APPARATUS
First Claim
1. A method of cleaning a plasma etching apparatus comprising:
- supplying a cleaning gas into a chamber of a plasma etching apparatus;
igniting a plasma of the cleaning gas in the chamber;
allowing plasma cleaning to proceed in the chamber, by bringing the cleaning gas in a plasma form into contact with a deposit adhered on the inner wall of the chamber so as to etch off the deposit;
detecting an intensity of plasma emission ascribable to the deposit adhered on the inner wall in a time-dependent manner;
terminating the plasma cleaning in the chamber based on changes in the intensity of the plasma emission; and
after the terminating the plasma cleaning, introducing an inert gas into the chamber, detecting gas concentration of a predetermined compound in the chamber in a time-dependent manner, and terminating the introduction of the inert gas based on changes in the gas concentration.
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Accused Products
Abstract
Method of cleaning a plasma etching apparatus capable of suppressing variation in line width among wafers in a single lot, and improving throughput in the cleaning process, includes steps of supplying a cleaning gas into a chamber of a plasma etching apparatus; igniting a plasma of the cleaning gas in the chamber; and allowing plasma cleaning to proceed in the chamber, by bringing the cleaning gas in plasma form into contact with a deposit adhered on the inner wall of the chamber so as to etch off the deposit, wherein in the step of plasma cleaning in the chamber, intensity of plasma emission ascribable to the deposit adhered on the inner wall of the chamber is detected in a time-dependent manner, and the plasma cleaning in the chamber is terminated based on changes in the intensity of the plasma emission.
10 Citations
7 Claims
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1. A method of cleaning a plasma etching apparatus comprising:
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supplying a cleaning gas into a chamber of a plasma etching apparatus; igniting a plasma of the cleaning gas in the chamber; allowing plasma cleaning to proceed in the chamber, by bringing the cleaning gas in a plasma form into contact with a deposit adhered on the inner wall of the chamber so as to etch off the deposit; detecting an intensity of plasma emission ascribable to the deposit adhered on the inner wall in a time-dependent manner; terminating the plasma cleaning in the chamber based on changes in the intensity of the plasma emission; and after the terminating the plasma cleaning, introducing an inert gas into the chamber, detecting gas concentration of a predetermined compound in the chamber in a time-dependent manner, and terminating the introduction of the inert gas based on changes in the gas concentration. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification