Microneedle Structure And Production Method Therefor

• US 20110073560A1
• Filed: 12/02/2010
• Published: 03/31/2011
• Est. Priority Date: 08/28/2000
• Status: Active Grant

• Current Assignee: Nanopass Technologies Ltd.
• Original Assignee: Nanopass Technologies Ltd.
• Inventors: Hefetz, Mier, De Boer, Meint, Yeshurun, Yehoshua, Gardeniers, J.G.E., Berenschot, J.W.
• Granted Patent: US 8,454,844 B2
• Time in Patent Office: Days
• US Class Current: 216/11
• CPC Class Codes: A61M 2037/003 having a lumen
• CPC Class Codes: A61M 2037/0053 Methods for producing microneedles
• CPC Class Codes: A61M 37/0015 by using microneedles
• CPC Class Codes: B81B 2203/0361 Tips, pillars
• CPC Class Codes: B81C 1/005 Bulk micromachining

Abstract

A method for processing a wafer to form a plurality of hollow microneedles projecting from a substrate includes forming, by use of a dry etching process, a number of groups of recessed features, each including at least one slot deployed to form an open shape having an included area and at least one hole located within the included area. The internal surfaces of the holes and the slots are then coated with a protective layer. An anisotropic wet etching process is then performed in such a manner as to remove material from outside the included areas while leaving a projecting feature within each of the included areas. The protective layer is then removed to reveal the microneedles.

Claims

1. A method for forming a microneedle structure from a wafer, the microneedle structure including a microneedle contiguous with, and projecting from, a substrate, the microneedle having a set of contiguous upright surfaces standing substantially perpendicular to the substrate, and an inclined surface inclined so as to intersect with the set of contiguous upright surfaces, the method comprising the steps of:

(a) processing the wafer by a first etching process to define the set of contiguous upright surfaces;

(b) coating the upright surfaces with a protective coating; and

(c) performing a wet etching process so as to form the inclined surface intersecting with the upright surfaces.

2. The method of claim 1, wherein said first etching process is a dry etching process performed so as to cut slots into the wafer to define the at least two upright surfaces.

3. The method of claim 1, wherein said wet etching process is an anisotropic wet etching process.

4. The method of claim 1, wherein said wet etching process additionally removes material from a surface of the wafer around the microneedle so as to define the substrate.

5. The method of claim 1, wherein the wafer is a silicon single crystal wafer.

6. The method of claim 1, wherein said first etching process additionally defines a channel passing through at least part of a thickness of the wafer, and wherein the channel is located such that, after said wet etching process, the channel intersects the inclined surface.

7. The method of claim 6, wherein said channel forms at least part of a fluid flow channel extending from the inclined surface through to an opposing face of the substrate.

8. The method of claim 6, wherein said channel has an asymmetric cross-sectional shape.

9. The method of claim 6, wherein said channel has an elongated rounded cross-sectional shape.

10. The method of claim 6, wherein said channel has a substantially triangular cross-sectional shape.

11. The method of claim 1, wherein the set of contiguous upright surfaces include at least two upright surfaces intersecting at an edge.

12. The method of claim 1, wherein the set of contiguous upright surfaces include at least two planar upright surfaces.

13. The method of claim 12, wherein said at least two planar upright surfaces are non-parallel.

14. The method of claim 12, wherein said at least two planar upright surfaces subtend an angle of between about 30°

and about 120°

therebetween.

15. The method of claim 12, wherein said at least two planar upright surfaces subtend an angle of between about 60°

and about 100°

therebetween.

16. The method of claim 1, wherein said inclined surface corresponds to a <

111>

crystallographic plane in a single crystal from which said wafer is formed.

17. The method of claim 1, further comprising processing the microneedle structure to provide a coating layer on surfaces of the microneedle structure.

18. The method of claim 1, wherein said first etching process is configured to define the set of contiguous upright surfaces so as to form a one-dimensional array of microneedles projecting from the substrate.

19. A method for forming a microneedle structure from a wafer, the microneedle structure including a microneedle contiguous with, and projecting from, a substrate, the microneedle having a set of contiguous upright surfaces standing substantially perpendicular to the substrate, and an inclined surface inclined so as to intersect with the set of contiguous upright surfaces, the method comprising the steps of:

(a) processing the wafer by a dry etching process to cut slots into the wafer so as to define the set of contiguous upright surfaces;

(b) coating the upright surfaces with a protective coating;

(e) performing an anisotropic wet etch so as to form the inclined surface intersecting with the upright surfaces while lowering the surrounding surface of the wafer to define the substrate; and

(d) removing the protective coating.

20. The method of claim 19, wherein the wafer is a silicon single crystal wafer.

21. The method of claim 19, wherein said dry etching process additionally defines a channel passing through at least part of a thickness of the wafer, and wherein the channel is located such that, after said wet etching process, the channel intersects the inclined surface.

22. The method of claim 21, wherein said channel forms at least part of a fluid flow channel extending from the inclined surface through to an opposing face of the substrate.