OPTOELECTRONIC DEVICES HAVING A DIRECT-BAND-GAP BASE AND AN INDIRECT-BAND-GAP EMITTER
First Claim
1. An optoelectronic device comprising:
- a base layer comprising a first semiconductor material having a first conductivity type and further having a direct band gap; and
an emitter layer forming a junction with the base layer, wherein the emitter layer comprises a second semiconductor material having a second conductivity type and further having an indirect band gap.
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Accused Products
Abstract
Optoelectronic devices, junctions and methods of fabricating a device or junction where the emitter layer is of an indirect-band-gap material and the base layer is of a direct-band-gap material. The device or junction may have, among other structures and layers, a base layer of a first semiconductor material having a first conductivity type and further having a direct band gap and an emitter layer forming a junction with the base layer. In this embodiment, the emitter layer may be of a second semiconductor material having a second conductivity type and further having an indirect band gap. The optoelectronic device may have the semiconductor material of the emitter layer substantially lattice mismatched with the semiconductor material of the base layer in bulk form. Alternatively, the emitter layer may be substantially lattice matched with the base layer.
83 Citations
25 Claims
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1. An optoelectronic device comprising:
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a base layer comprising a first semiconductor material having a first conductivity type and further having a direct band gap; and an emitter layer forming a junction with the base layer, wherein the emitter layer comprises a second semiconductor material having a second conductivity type and further having an indirect band gap. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of forming an optoelectronic device comprising:
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providing a base layer comprising a first semiconductor material having a first conductivity type and further having a direct band gap; and associating an emitter layer with the semiconductor base layer, the emitter comprising a second semiconductor material having a second conductivity type and further having an indirect band gap. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24)
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25. A junction comprising:
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a base layer comprising a first semiconductor material having a first conductivity type and further having a direct band gap; and an emitter layer in contact with the base layer, the emitter layer comprising a second semiconductor material having a second conductivity type and further having an indirect band gap.
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Specification