LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A light emitting diode (LED), comprising:
- a substrate;
a first semiconductor layer disposed on the substrate, having a first portion and a second portion extending from each other, wherein the first portion has a rough surface region and a flat surface region recessed relative to the rough surface region;
a light emitting layer disposed on the second portion of the first semiconductor layer, defining a light emitting region thereon;
a second semiconductor layer disposed on the light emitting layer, having a rough surface region and at least one flat surface region recessed relative to the rough surface region, wherein the first semiconductor layer and the second semiconductor layer have different electrical conductivities;
an insulative layer disposed on the at least flat surface region of the second semiconductor layer;
a transparent conductive layer disposed on the insulative layer and the rough surface region of the second semiconductor layer such that the transparent conductive layer has a rough surface region and a flat surface region corresponding to the rough surface region and the at least one flat surface region of the second semiconductor layer, respectively;
a first electrode disposed on the flat surface region of the first semiconductor layer; and
a second electrode disposed on the flat surface region of the transparent conductive layer.
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Accused Products
Abstract
In one aspect of the invention, an LED includes a substrate, an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer and a transparent conductive layer sequentially stacked on the substrate, and p-type and n-type electrodes. The p-type semiconductor layer has a rough surface region and at least one flat surface region. The transparent conductive layer has a rough surface region and a flat surface region corresponding to the rough surface region and the at least one flat surface region of the p-type semiconductor layer, respectively. The p-type electrode is disposed on the flat surface region of the transparent conductive layer. The n-type electrode is electrically couple to the n-type semiconductor layer.
36 Citations
35 Claims
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1. A light emitting diode (LED), comprising:
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a substrate; a first semiconductor layer disposed on the substrate, having a first portion and a second portion extending from each other, wherein the first portion has a rough surface region and a flat surface region recessed relative to the rough surface region; a light emitting layer disposed on the second portion of the first semiconductor layer, defining a light emitting region thereon; a second semiconductor layer disposed on the light emitting layer, having a rough surface region and at least one flat surface region recessed relative to the rough surface region, wherein the first semiconductor layer and the second semiconductor layer have different electrical conductivities; an insulative layer disposed on the at least flat surface region of the second semiconductor layer; a transparent conductive layer disposed on the insulative layer and the rough surface region of the second semiconductor layer such that the transparent conductive layer has a rough surface region and a flat surface region corresponding to the rough surface region and the at least one flat surface region of the second semiconductor layer, respectively; a first electrode disposed on the flat surface region of the first semiconductor layer; and a second electrode disposed on the flat surface region of the transparent conductive layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A light emitting diode (LED), comprising:
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a substrate; a first semiconductor layer disposed on the substrate; a light emitting layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the light emitting layer, having a rough surface region and at least one flat surface region, wherein the first semiconductor layer and the second semiconductor layer have different electrical conductivities; a transparent conductive layer disposed on the second semiconductor layer such that the transparent conductive layer has a rough surface region and a flat surface region corresponding to the rough surface region and the at least one flat surface region of the second semiconductor layer, respectively; a first electrode electrically coupled to the first semiconductor layer; and a second electrode disposed on the flat surface region of the transparent conductive layer, wherein in operation, no current flows vertically from the flat surface region of the transparent conductive layer to the at least one flat surface region of the second semiconductor layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A method of manufacturing a light emitting diode (LED), comprising the steps of:
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providing a substrate; sequentially forming an n-type semiconductor layer on the substrate, a light emitting layer on the n-type semiconductor layer, and a p-type semiconductor layer on the light emitting layer, wherein the p-type semiconductor layer has a rough surface having a first region, a second region and a third region separated from the second region; forming a first mask layer on the first region of the rough surface of the p-type semiconductor layer, thereby exposing the second and third regions of the rough surface of the p-type semiconductor layer; forming a second mask layer on the first mask layer and the exposed second and third regions of the rough surface of the p-type semiconductor layer, wherein the second mask layer and the p-type semiconductor layer have a substantially same etching rate, wherein the first mask layer has an etching rate less than that of the second mask layer and the p-type semiconductor layer; performing an etching process on the second mask layer and the first mask layer so as to form a first flat surface region and a second flat surface region in the second and third regions of the p-type semiconductor layer, respectively, and to expose the rough surface of the first region of the p-type semiconductor layer; removing a portion of the p-type semiconductor layer in which the second flat surface region is located and a corresponding portion of the light emitting layer so as to expose a portion of the n-type semiconductor layer, and forming a third flat surface region on the exposed portion of the n-type semiconductor layer; forming a transparent conductive layer on the rough surface region and the first flat surface region of the p-type semiconductor layer, such that the transparent conductive layer has a rough surface region and a flat surface region corresponding to the rough surface region and the first flat surface region of the p-type semiconductor layer, respectively; and forming an n-type electrode on the third flat surface region of the n-type semiconductor layer and a p-type electrode on the flat surface region of transparent conductive layer. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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Specification