FIELD-EFFECT SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME

• US 20110073938A1
• Filed: 12/02/2010
• Published: 03/31/2011
• Est. Priority Date: 06/02/2008
• Status: Active Grant

• Current Assignee: Sanken Electric Company Limited
• Original Assignee: Sanken Electric Company Limited
• Inventors: TAKAHASHI, Ryoji
• Granted Patent: US 8,334,563 B2
• Time in Patent Office: Days
• US Class Current: 257/328
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 29/0619 with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/086 Impurity concentration or distribution
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7806 the other device being a Schottky barrier diode
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A semiconductor substrate of an IGFET has drain regions, a p-type first body region, a p⁻-type second body region, an n-type first source region, and an n⁺-type second source region, and additionally has multiple pairs of trenches that constitute an IGFET cell. A gate insulating film and a gate electrode are provided inside the trenches. A source electrode is in Schottky contact with the second body region. A pn junction between the second drain region and the first body region is exposed to one of the main surfaces of the semiconductor substrate. The first body region, the second body region, and the first source region are also provided outside the trenches, and an n-type protective semiconductor region is provided. The trenches contribute to miniaturization of the IGFET and to lowering of the on-resistance. The reverse breakdown voltage of the IGFET can be improved by the reduction in contact area between the second body region and the source electrode to the outside from the trenches.

Claims

1. A field-effect semiconductor device comprising:

a semiconductor substrate comprising first and second major surfaces extending parallel to each other, and at least a pair of trenches extending from the first major surface thereof toward but short of reaching the second major surface thereof;

a drain region of a first conductivity type having a surface exposed at the second major surface, the drain region being disposed contiguous to the pair of trenches;

a first body region of a second conductivity type comprising a cell subregion disposed between the pair of trenches and contiguous to the drain region, a first outer subregion disposed outside the pair of trenches and contiguous to the drain region and having a first mean impurity concentration, and a second outer subregion disposed outside the first outer subregion and contiguous to the drain region;

a second body region of the second conductivity type comprising a Schottky-barrier-diode-forming cell subregion and a Schottky-barrier-diode-forming outer subregion, the Schottky-barrier-diode-forming cell subregion having a mean impurity concentration lower than the first mean impurity concentration, being disposed between the pair of trenches and contiguous to the first body region, and having a surface exposed at the first major surface, the Schottky-barrier-diode-forming outer subregion having a mean impurity concentration lower than the first mean impurity concentration, being disposed outside the pair of trenches and contiguous to the first body region, and having a surface exposed at the first major surface;

a source region of the first conductivity type having a cell subregion and an outer subregion, the cell subregion being disposed between the pair of trenches and contiguous to both the Schottky-barrier-diode-forming cell subregion and the trenches and having a surface exposed at the first major surface, the outer subregion being disposed outside the pair of trenches and contiguous to both the pair of trenches and the Schottky-barrier-diode-forming outer subregion and having a surface exposed at the first major surface;

a Schottky barrier diode protect semiconductor region disposed outside the Schottky-barrier-diode-forming outer subregion and contiguous to the Schottky-barrier-diode-forming outer subregion and having a surface exposed at the first major surface;

a drain electrode disposed on the second major surface in ohmic contact with the drain region;

a source electrode disposed on the first major surface in ohmic contact with both the source region and the Schottky barrier diode protect semiconductor region and in Schottky contact with both the Schottky-barrier-diode-forming cell subregion and Schottky-barrier-diode-forming outer subregion;

a gate insulator formed in the pair of trenches; and

a gate electrode disposed in the pair of trenches with interposing the gate insulator.

2. The field-effect semiconductor device as recited in claim 1, wherein the drain region of the semiconductor substrate is divided into:

a first drain region of the first conductivity type having a surface exposed at the second major surface; and

a second drain region of the first conductivity type with an impurity concentration lower than that of the first drain region, the second drain region being disposed contiguous to both of the first drain region and the pair of trenches and has a surface exposed at the first major surface on the outside of the pair of trenches,

the drain electrode being in ohmic contact with the first drain region.

3. The field-effect semiconductor device as recited in claim 1, wherein the first outer subregion is so formed that the p-n junction between the first outer subregion and the drain region extends parallel to the first major surface, and wherein the second outer subregion is so formed that the distance between the p-n junction between the second outer subregion and the drain region and the first major surface is gradually shorter toward a direction away from the first outer subregion.

4. The field-effect semiconductor device as recited in claim 1, wherein the second body region is disposed between the first body region and the source region and contiguous to the pair of trenches, and disposed at an entire place between the first body region and the Schottky barrier diode protect semiconductor region.

5. The field-effect semiconductor device as recited in claim 1, wherein the second body region is so formed as not to be contiguous to the trenches, wherein the source region is disposed contiguous to both the first and the second body regions, and wherein the Schottky barrier diode protect semiconductor region is disposed contiguous to both the first and the second body region.

6. The field-effect semiconductor device as recited in claim 1, wherein the cell subregion of the source region is divided into one part contiguous to one of the pair of trenches and another part contiguous to another of the pair of trenches in the semiconductor substrate, and wherein the cell subregion of the second body region is exposed at the first major surface between the two parts of the cell subregion of the source region.

7. The field-effect semiconductor device as recited in claim 1, wherein the cell subregion of the source region comprises a first source region disposed contiguous to both the second body region and the pair of trenches and having a surface exposed at the first major surface, and a second source region disposed contiguous to the first source region and having an impurity concentration higher than that of the first source region and having a surface exposed at the first major surface.

8. The field-effect semiconductor device as recited in claim 1, wherein the source electrode makes limited Schottky contact with a plurality of parts of the outer subregion of the second body region.

9. The field-effect semiconductor device as recited in claim 1, wherein the outer subregion of the second body region is divided into a plurality of parts.

10. The field-effect semiconductor device as recited in claim 1, wherein a width (W₂) of the Schottky contact between the source electrode and the outer subregion of the second body region is from about 1/10 to about 10 times a width (W₁) of the Schottky contact between the source electrode and the cell subregion of the second body region.

11. The field-effect semiconductor device as recited in claim 1, wherein a width (W₂) of the Schottky contact between the source electrode and the outer subregion of the second body region is from about 0.1 to about 20 micrometers.

12. The field-effect semiconductor device as recited in claim 1, wherein an area of the Schottky contact between the source electrode and the outer subregion of the second body region is from about 1/10 to about 10 times an area of the Schottky contact between the source electrode and the cell subregion of the second body region.

13. A method of producing a field-effect semiconductor device, comprising:

providing a semiconductor substrate of a first conductivity type, the semiconductor substrate having first and second opposite major surfaces;

forming a mask covering an outer part of the first major surface;

carrying out selective diffusion of an impurity of a second conductivity type into the semiconductor substrate by using the mask, thereby forming a first body region and obtaining a drain region comprising a part in the semiconductor substrate not subject to the diffusion of the impurity of the second conductivity type;

forming in the semiconductor substrate at least a pair of trenches extending from the first major surface toward the second major surface and having a depth to reach the drain region;

forming a gate insulator film on sides surfaces of the trenches;

forming in each trench a gate electrode which is opposed to at least the first body region with interposing the gate insulator film;

either before or after the formation of the trenches, selectively diffusing an impurity of the second conductivity type into the semiconductor substrate from the first major surface in a concentration not sufficient to change conductivity type, thereby forming a second body region of the second conductivity type comprising a Schottky-barrier-diode-forming cell subregion and a Schottky-barrier-diode-forming outer subregion, the Schottky-barrier-diode-forming cell subregion having a mean impurity concentration lower than that of the first body region, being disposed between the pair of trenches and contiguous to the first body region and having a surface exposed at the first major surface midway between the pair of trenches, the Schottky-barrier-diode-forming outer subregion having a mean impurity concentration lower than the first body region, being disposed contiguous to the first body region outside the pair of trenches and having a surface exposed at the first major surface outside the pair of trenches;

either before or after the formation of the trenches, selectively diffusing an impurity of the first conductivity type into the semiconductor substrate from the first major surface, thereby forming a source region comprising a cell subregion and an outer subregion, the cell subregion being disposed between the pair of trenches and contiguous to both the cell subregion of the second body region and the pair of trenches and having a surface exposed at the first major surface, the outer subregion being disposed outside the pair of trenches at the first major surface and contiguous to both the pair of trenches and the outer subregion of the second body region and having a surface exposed at the first major surface;

either concurrently with or separately from the formation of the source region, selectively diffusing an impurity of the first conductivity type into the semiconductor substrate from the first major surface, thereby forming a Schottky barrier diode protect semiconductor region so disposed as to have contiguity to the outer subregion of the second body region in a position farther away from the trenches than the outer subregion of the source region, the Schottky barrier diode protect semiconductor region having a surface exposed at the first major surface;

forming a drain electrode on the second major surface in ohmic contact with the drain region; and

forming a source electrode on the first major surface in ohmic contact with both the source region and the Schottky barrier diode protect semiconductor region and in Schottky contact with the second body region.