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VERTICAL MIRROR IN A SILICON PHOTONIC CIRCUIT

  • US 20110073972A1
  • Filed: 09/25/2009
  • Published: 03/31/2011
  • Est. Priority Date: 09/25/2009
  • Status: Active Grant
First Claim
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1. A method for forming a mirror in a silicon photonic circuit, comprising:

  • providing a handle wafer;

    forming a buried oxide (BOX) layer on the handle wafer;

    providing a device wafer comprising a silicon on insulator (SOI) wafer on the BOX layer;

    depositing a nitride layer on the device wafer;

    etching a trench in the device wafer to expose the BOX layer;

    etching the BOX layer to create an undercut beneath the device layer;

    immersing in an etchant to fill the trench creating a trapezoidal shape from the trench and undercut areas with the device layer comprising a facet; and

    replanerizing the device wafer, wherein the facet comprises a re-entrant total-internal-reflection (TIR) mirror.

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