REDOX CAPACITOR AND MANUFACTURING METHOD THEREOF

• US 20110073991A1
• Filed: 09/27/2010
• Published: 03/31/2011
• Est. Priority Date: 09/30/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kuriki, Kazutaka, Sakata, Junichiro, Ogino, Kiyofumi, Saito, Yumiko
• Granted Patent: US 8,952,490 B2
• Time in Patent Office: Days
• US Class Current: 257/532
• CPC Class Codes: H01G 11/02 using combined reduction-oxidation reactions, e.g. redox arrangement or solion
• CPC Class Codes: H01G 11/28 arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives
• CPC Class Codes: H01G 11/56 Solid electrolytes, e.g. gels; Additives therein
• CPC Class Codes: H01G 11/68 characterised by their material
• CPC Class Codes: H01G 11/70 characterised by their structure
• CPC Class Codes: H01G 11/84 Processes for the manufacture of hybrid or EDL capacitors, or components thereof
• CPC Class Codes: H01G 9/22 Devices using combined reduction and oxidation, e.g. redox arrangement or solion
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: Y02E 60/13 Energy storage using capacitors

Abstract

To provide a redox capacitor that can be used at room temperature and a manufacturing method thereof. Amorphous semiconductor including hydrogen is used as an electrolyte of a redox capacitor. As a typical example of the amorphous semiconductor including hydrogen, an amorphous semiconductor including a semiconductor element such as amorphous silicon, amorphous silicon germanium, or amorphous germanium can be used. As another example of the amorphous semiconductor including hydrogen, oxide semiconductor including hydrogen can be used. As typical examples of the oxide semiconductor including hydrogen, an amorphous semiconductor including a single-component oxide semiconductor such as zinc oxide, titanium oxide, nickel oxide, vanadium oxide, and indium oxide can be given. As another example of oxide semiconductor including hydrogen, a multi-component oxide semiconductor such as InMO₃(ZnO)_m (m>0 and M is one or more metal elements selected from Ga, Fe, Ni, Mn, and Co) can be used.

Claims

1. A redox capacitor comprising an electrolyte formed using amorphous semiconductor including hydrogen.

2. The redox capacitor according to claim 1, wherein the amorphous semiconductor including hydrogen is amorphous silicon, amorphous silicon germanium, or amorphous germanium.

3. The redox capacitor according to claim 1, wherein the amorphous semiconductor including hydrogen is oxide semiconductor including hydrogen.

4. A redox capacitor comprising an electrolyte formed using amorphous semiconductor including hydrogen, wherein the amorphous semiconductor including hydrogen is oxide semiconductor including hydrogen.

5. The redox capacitor according to claim 4, wherein the oxide semiconductor including hydrogen is zinc oxide, titanium oxide, nickel oxide, vanadium oxide, or indium oxide.

6. The redox capacitor according to claim 4, wherein the amorphous semiconductor including hydrogen is an In—

M—

Zn-oxide semiconductor and wherein M is one or more metal elements selected from Al, Ga, Fe, Ni, Mn, and Co.

7. A manufacturing method of a redox capacitor comprising a step of forming an electrolyte using amorphous semiconductor including hydrogen over a first active material which is formed over a substrate and in contact with a first current collector.

8. The manufacturing method of a redox capacitor according to claim 7, wherein a second active material in contact with the electrolyte and a second current collector in contact with the second active material are formed.

11. The manufacturing method of a redox capacitor according to claim 7, wherein the electrolyte is formed by sputtering using a target including hydrogen.

14. The manufacturing method of a redox capacitor according to claim 7, wherein the electrolyte is formed by sputtering a target with the use of hydrogen.

17. The manufacturing method of a redox capacitor according to claim 7, wherein the electrolyte is formed by a CVD method using a source gas including a hydrogen atom.

20. The manufacturing method of a redox capacitor according to claim 7, wherein the amorphous semiconductor including hydrogen is formed as the electrolyte by performing heating in an atmosphere of hydrogen after amorphous semiconductor is deposited over the substrate, the first active material, or the second active material.

23. The manufacturing method of a redox capacitor according to claim 7, wherein the amorphous semiconductor including hydrogen is formed as the electrolyte by adding hydrogen into amorphous semiconductor after the amorphous semiconductor is deposited over the substrate, the first active material, or the second active material.

9. A manufacturing method of a redox capacitor comprising steps of forming a first active material and a second active material which are in contact with the electrolyte and forming a first current collector in contact with the first active material and a second current collector in contact with the second active material, after a step of forming the electrolyte using amorphous semiconductor including hydrogen over a substrate.

12. The manufacturing method of a redox capacitor according to claim 9, wherein the electrolyte is formed by sputtering using a target including hydrogen.

15. The manufacturing method of a redox capacitor according to claim 9, wherein the electrolyte is formed by sputtering a target with the use of hydrogen.

18. The manufacturing method of a redox capacitor according to claim 9, wherein the electrolyte is formed by a CVD method using a source gas including a hydrogen atom.

21. The manufacturing method of a redox capacitor according to claim 9, wherein the amorphous semiconductor including hydrogen is formed as the electrolyte by performing heating in an atmosphere of hydrogen after amorphous semiconductor is deposited over the substrate, the first active material, or the second active material.

24. The manufacturing method of a redox capacitor according to claim 9, wherein the amorphous semiconductor including hydrogen is formed as the electrolyte by adding hydrogen into amorphous semiconductor after the amorphous semiconductor is deposited over the substrate, the first active material, or the second active material.

10. A manufacturing method of a redox capacitor comprising a step of forming an electrolyte using amorphous semiconductor including hydrogen which is in contact with a first active material and a second active material, after steps of forming a first current collector and a second current collector over a substrate, forming the first active material in contact with the first current collector, and forming the second active material in contact with the second current collector.

13. The manufacturing method of a redox capacitor according to claim 10, wherein the electrolyte is formed by sputtering using a target including hydrogen.

16. The manufacturing method of a redox capacitor according to claim 10, wherein the electrolyte is formed by sputtering a target with the use of hydrogen.

19. The manufacturing method of a redox capacitor according to claim 10, wherein the electrolyte is formed by a CVD method using a source gas including a hydrogen atom.

22. The manufacturing method of a redox capacitor according to claim 10, wherein the amorphous semiconductor including hydrogen is formed as the electrolyte by performing heating in an atmosphere of hydrogen after amorphous semiconductor is deposited over the substrate, the first active material, or the second active material.

25. The manufacturing method of a redox capacitor according to claim 10, wherein the amorphous semiconductor including hydrogen is formed as the electrolyte by adding hydrogen into amorphous semiconductor after the amorphous semiconductor is deposited over the substrate, the first active material, or the second active material.