Semiconductor Device and Method of Forming Flipchip Interconnect Structure
First Claim
1. A method of making a semiconductor device, comprising:
- providing a semiconductor die having a plurality of bumps formed over an active surface of the semiconductor die;
providing a substrate;
forming a plurality of conductive traces with interconnect sites over the substrate, the bumps being wider than the interconnect sites;
forming a masking layer over an area of the substrate away from the interconnect sites;
bonding the bumps to the interconnect sites so that the bumps cover a top surface and side surfaces of the interconnect sites; and
depositing an encapsulant around the bumps between the semiconductor die and substrate.
0 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device has a semiconductor die with a plurality of bumps or interconnect structures formed over an active surface of the die. The bumps can have a fusible portion and non-fusible portion, such as a conductive pillar and bump formed over the conductive pillar. A plurality of conductive traces with interconnect sites is formed over a substrate. The bumps are wider than the interconnect sites. A masking layer is formed over an area of the substrate away from the interconnect sites. The bumps are bonded to the interconnect sites under pressure or reflow temperature so that the bumps cover a top surface and side surfaces of the interconnect sites. An encapsulant is deposited around the bumps between the die and substrate. The masking layer can form a dam to block the encapsulant from extending beyond the semiconductor die. Asperities can be formed over the interconnect sites or bumps.
97 Citations
25 Claims
-
1. A method of making a semiconductor device, comprising:
-
providing a semiconductor die having a plurality of bumps formed over an active surface of the semiconductor die; providing a substrate; forming a plurality of conductive traces with interconnect sites over the substrate, the bumps being wider than the interconnect sites; forming a masking layer over an area of the substrate away from the interconnect sites; bonding the bumps to the interconnect sites so that the bumps cover a top surface and side surfaces of the interconnect sites; and depositing an encapsulant around the bumps between the semiconductor die and substrate. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. A method of making a semiconductor device, comprising:
-
providing a semiconductor die having a plurality of interconnect structures formed over a surface of the semiconductor die; providing a substrate; forming a plurality of conductive traces with interconnect sites over the substrate, the interconnect structures being wider than the interconnect sites; bonding the interconnect structures to the interconnect sites absent a mask opening so that the interconnect structures cover a top surface and side surfaces of the interconnect sites; and depositing an encapsulant around the interconnect structures between the semiconductor die and substrate. - View Dependent Claims (8, 9, 10, 11, 12, 13)
-
-
14. A method of making a semiconductor device, comprising:
-
providing a semiconductor die having a plurality of interconnect structures formed over a surface of the semiconductor die; providing a substrate; forming a plurality of conductive traces with interconnect sites over the substrate, the interconnect sites being narrower than the interconnect structures; and bonding the interconnect structures to the interconnect sites absent a mask opening so that the interconnect structures cover a top surface and side surfaces of the interconnect sites. - View Dependent Claims (15, 16, 17, 18, 19, 20)
-
-
21. A semiconductor device, comprising:
-
a semiconductor die having a plurality of interconnect structures formed over a surface of the semiconductor die; a substrate; a plurality of conductive traces with interconnect sites formed over the substrate, the interconnect sites being narrower than the interconnect structures, the interconnect structures being bonded to the interconnect sites so that the interconnect structures cover a top surface and side surfaces of the interconnect sites; and an encapsulant deposited around the interconnect structures between the semiconductor die and substrate. - View Dependent Claims (22, 23, 24, 25)
-
Specification