Resist pattern forming method, semiconductor apparatus using said method, and exposure apparatus thereof

• US 20110075119A1
• Filed: 10/01/2010
• Published: 03/31/2011
• Est. Priority Date: 03/24/2004
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Ito, Shinichi
• Application Number:
  US12/923,666
• Publication Number:
  US 20110075119A1
• Time in Patent Office: Days
• US Class Current: 355/30
• CPC Class Codes: G03F 7/2043 with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking
• CPC Class Codes: G03F 7/70341 Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply chemical composition of immersion liquids G03F7/2041
• CPC Class Codes: H01L 21/30 Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 manufacture of electrodes thereon H01L21/28

Abstract

In immersion exposure, a resist pattern forming method suppressing resist pattern defects comprises mounting a substrate formed a resist film thereon and a reticle formed a pattern thereon onto an exposure apparatus, supplying a first chemical solution onto the resist film to selectively form a first liquid film in a local area on the resist film and draining the solution, the first liquid film having a flow and being formed between the resist film and a projection optical system, transferring the pattern of the reticle to the resist film through the first liquid film to form a latent image, supplying a second chemical solution onto the resist film to clean the resist film, heating the resist film, and developing the resist film to form a resist pattern from the resist film.

Claims

1-31. -31. (canceled)

32. A water processing unit for photolithography comprising:

a substrate support portion on which a substrate is mounted, the substrate being provided with a resist film thereon;

a drive portion driving the substrate support portion to spin; and

a cleaning nozzle to spray water over substantially entire surface of the substrate on which the resist film prior to exposure is provided, the cleaning nozzle being configured to scan over the surface of the substrate.

33. The unit according to claim 32, wherein the cleaning nozzle scans substantially entire surface of the substrate (10) at such a moving speed as to control an amount of the water supplied per unit area of the substrate to be substantially identical.

34. The unit according to claim 32, wherein the cleaning nozzle is reciprocated between one end and the other end of the substrate through a central portion of the substrate.

35. The unit according to claim 33, wherein, when the cleaning nozzle is positioned around the one end or the other end of the substrate, the cleaning nozzle moves at a first moving speed, and when the cleaning nozzle is positioned at the central portion of the substrate, the cleaning nozzle moves at a second speed faster than the first moving speed.

36. The unit according to claim 32, wherein the cleaning nozzle is reciprocated between one end and a central portion of the substrate.

37. The unit according to claim 32, wherein, when the cleaning nozzle moves at a constant speed, the number of revolution of the substrate is changed in reverse proportion to a position of the spray nozzle in a radial direction on the substrate.

38. The unit according to claim 32, wherein the cleaning nozzle sprays the water in a direction orthogonal to a surface of the substrate.

39. The unit according to claim 32, wherein the cleaning nozzle sprays the water in a inclined manner in the same direction to a spinning direction of the substrate.

40. The unit according to claim 32, wherein the cleaning nozzle sprays the water in a inclined manner in an opposite direction to a spinning direction of the substrate.

41. The unit according to claim 32, further comprising a gas injection portion (21) spraying a gas to a part of the surface of the substrate to remove the liquid film therefrom.

42. The unit according to claim 32, wherein the gas injection portion (21) scans over substantially entire surface of the substrate.

43. The unit according to claim 32, wherein the gas injection portion is an air knife (21).