CIRCUIT AND METHOD FOR GENERATING REFERENCE VOLTAGE, PHASE CHANGE RANDOM ACCESS MEMORY APPARATUS AND READ METHOD USING THE SAME
First Claim
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1. A circuit for generating reference voltage, comprising:
- at least one reference cell, the reference cell being a variable resistance memory cell;
a reference cell write driver configured to write data to the reference cell;
a reference cell sense amplifier configured to output an output value by reading out the data stored in the reference cell on the basis of a predetermined reference voltage; and
a voltage compensation unit configured to output a compensation reference voltage having a value adjusted according to the output value of the reference cell sense amplifier.
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Abstract
A circuit for generating a reference voltage includes at least one reference cell, a reference cell write driver, a reference cell sense amplifier, and a voltage compensation unit. The reference cell is a variable resistance memory cell. The reference cell write driver writes data to the reference cell. The reference cell sense amplifier reads out the data stored in the reference cell on the basis of a predetermined reference voltage. A voltage compensation unit outputs a compensation reference voltage by controlling the reference voltage in accordance with the output value of the sense amplifier.
36 Citations
17 Claims
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1. A circuit for generating reference voltage, comprising:
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at least one reference cell, the reference cell being a variable resistance memory cell; a reference cell write driver configured to write data to the reference cell; a reference cell sense amplifier configured to output an output value by reading out the data stored in the reference cell on the basis of a predetermined reference voltage; and a voltage compensation unit configured to output a compensation reference voltage having a value adjusted according to the output value of the reference cell sense amplifier. - View Dependent Claims (2, 3, 4)
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5. A method of generating reference voltage, comprising:
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writing data to a reference cell, the reference cell being a variable resistance memory cell; reading the data of the reference cell in accordance with a predetermined reference voltage; and generating a compensation reference voltage by adjusting the reference voltage in accordance with the result of reading the data of the reference cell. - View Dependent Claims (6, 7)
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8. A phase change random access memory (PCRAM) apparatus, comprising:
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a memory cell array including at least one memory cell coupled between a word line and a bit line; a reference voltage generating circuit comprising at least one reference cell and configured to generate a compensation reference voltage by writing data to a reference cell, reading the data from the reference cell, and adjusting a predetermined reference voltage; and a sense amplifier configured to read data of the memory cell in accordance with the compensation reference voltage. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A read method of a phase change random access memory apparatus including at least one reference cell and a memory cell array, the read method comprising:
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reading data of the reference cell in accordance with predetermined reference voltage; generating a compensation reference voltage by controlling the reference voltage in accordance with the result of reading the data of the reference cell; and reading data stored in at least one memory cell of the memory cell array on the basis of the compensation reference voltage. - View Dependent Claims (15, 16, 17)
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Specification