Method of Making Showerhead for Semiconductor Processing Apparatus

• US 20110076401A1
• Filed: 09/25/2009
• Published: 03/31/2011
• Est. Priority Date: 09/25/2009
• Status: Active Grant

• Current Assignee: Hermes-Epitek Corp.
• Original Assignee: Hermes-Epitek Corp.
• Inventors: CHAO, BEN-SON, CHANG, YU-FENG, CHEN, YEN-SI
• Granted Patent: US 8,216,640 B2
• Time in Patent Office: Days
• US Class Current: 427/249.16
• CPC Class Codes: C23C 16/325 Silicon carbide
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

A method of making a showerhead for a semiconductor processing apparatus is disclosed. In one embodiment, the method includes providing a substrate; forming first holes in the substrate; forming a protective film on the substrate, where the protective film covers sidewalls of the first holes; and forming second holes in the substrate, where a part of the protective film within the first holes is removed. In another embodiment, the method includes providing a substrate; forming islands on the substrate; forming a protective film on the substrate, where the protective film does not cover the tops of the islands; and forming holes in the islands.

Claims

1. A method of making a showerhead for a semiconductor processing apparatus, comprising:

providing a substrate;

forming a plurality of first holes in said substrate, said first holes having a first diameter;

forming a protective film on said substrate, wherein said protective film covers sidewalls of said first holes; and

forming a plurality of second holes in said substrate, said second holes having a second diameter, wherein said second diameter is larger than said first diameter, and a part of said protective film within said first holes is removed.

2. The method of making a showerhead for a semiconductor processing apparatus according to claim 1, wherein said substrate is a graphite substrate.

3. The method of making a showerhead for a semiconductor processing apparatus according to claim 1, wherein said protective film is a silicon carbide film formed by chemical vapor deposition, and the electric resistance of said silicon carbide film is about 1000000 ohm per cm.

4. The method of making a showerhead for a semiconductor processing apparatus according to claim 1, wherein said protective film is a silicon carbide film which is formed by chemical vapor deposition, and the thickness of said silicon carbide film is more than or equal to about 3 mm.

5. The method of making a showerhead for a semiconductor processing apparatus according to claim 1, wherein said substrate comprises one or more of graphite, single crystal silicon, polycrystalline silicon, silicon carbide, quartz, and sapphire.

6. The method of making a showerhead for a semiconductor processing apparatus according to claim 1, wherein said protective film comprises a hi-resistivity oxide material, said hi-resistivity oxide material comprising one or more of Y₂O₃, ZnO₂, ZrO₂, HfO₂, TiO₂, and Bi₂O₃.

7. The method of making a showerhead for a semiconductor processing apparatus according to claim 1, wherein said protective film comprises a metal-doped oxide material, said metal-doped oxide material comprising one or more of Y₂O₃, Eu, and ZnO—

Al.

8. The method of making a showerhead for a semiconductor processing apparatus according to claim 1, wherein said protective film comprises a two phase oxide material, said two phase oxide material comprising one or more of Al₂O₃, ZrO₂, and Y₂O₃.

9. The method of making a showerhead for a semiconductor processing apparatus according to claim 1, wherein said protective film comprises a rare-earth oxide material, said rare-earth oxide material comprising one or more of Gd₂O₃, Nd₂O₃, and Yb₂O₃.

10. The method of making a showerhead for a semiconductor processing apparatus according to claim 1, wherein said protective film comprises a thin-film CVD material, said thin-film CVD material comprising one or more of AlN, BN, and SiC.

11. A method of making a showerhead for a semiconductor processing apparatus, comprising:

providing a substrate;

forming a plurality of islands on said substrate;

forming a protective film on said substrate, wherein said protective film does not cover the tops of said islands; and

forming a plurality of holes in said islands.

12. The method of making a showerhead for a semiconductor processing apparatus according to claim 11, wherein said substrate is a graphite substrate.

13. The method of making a showerhead for a semiconductor processing apparatus according to claim 11, wherein said protective film is a silicon carbide film formed by chemical vapor deposition, and the electric resistance of said silicon carbide film is about 1000000 ohm per cm.

14. The method of making a showerhead for a semiconductor processing apparatus according to claim 11, wherein said protective film is a silicon carbide film formed by chemical vapor deposition with a thickness greater than or equal to about 3 mm.

15. The method of making a showerhead for a semiconductor processing apparatus according to claim 11, wherein said substrate comprises one or more of graphite, single crystal silicon, polycrystalline silicon, silicon carbide, quartz, and sapphire.

16. The method of making a showerhead for a semiconductor processing apparatus according to claim 11, wherein said protective film comprises a hi-resistivity oxide material, said hi-resistivity oxide material comprising one or more of Y₂O₃, ZnO₂, ZrO₂, HfO₂, TiO₂, and Bi₂O₃.

17. The method of making a showerhead for a semiconductor processing apparatus according to claim 11, wherein said protective film comprises a metal-doped oxide material, said metal-doped oxide material comprising one or more of Y₂O₃, Eu, and ZnO—

Al.

18. The method of making a showerhead for a semiconductor processing apparatus according to claim 11, wherein said protective film comprises a two phase oxide material, said two phase oxide material comprising one or more of Al₂O₃, ZrO₂, and Y₂O₃.

19. The method of making a showerhead for a semiconductor processing apparatus according to claim 11, wherein said protective film comprises a rare-earth oxide material, said rare-earth oxide material comprising one or more of Gd₂O₃, Nd₂O₃, and Yb₂O₃.

20. The method of making a showerhead for a semiconductor processing apparatus according to claim 11, wherein said protective film comprises a thin-film CVD material, said thin-film CVD material comprising one or more of AlN, BN, and SiC.