PROCESS FOR FABRICATING III-NITRIDE BASED NANOPYRAMID LEDS DIRECTLY ON A METALIZED SILICON SUBSTRATE
First Claim
1. A nanopyramid light-emitting diode comprising:
- a silicon substrate;
a III-nitride layer deposited on the silicon substrate;
a metal layer deposited on the III-nitride layer; and
a III-nitride nanopyramid light-emitting diode grown in ohmic contact with the metal layer.
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Accused Products
Abstract
A nanopyramid LED and method for forming. The nanopyramid LED includes a silicon substrate, a III-nitride layer deposited thereon, a metal layer deposited thereon; and a nanopyramid LED grown in ohmic contact with the metal layer. The nanopyramid LED can be seeded on the III-nitride layer or metal layer. The metal layer can be a reflecting surface for the nanopyramid LED. The method for forming nanopyramid LEDs includes obtaining a silicon substrate, depositing a III-nitride layer thereon, depositing a metal layer thereon, depositing a dielectric growth layer thereon, etching a dielectric growth template in the growth layer, and growing III-nitride nanopyramid LEDs through the dielectric growth template in ohmic contact with the metal layer. The etching can be performed by focused ion beam etching. The etching can stop in the metal layer or III-nitride layer, so that the nanopyramid LEDs can seed off the metal layer or III-nitride layer, respectively.
32 Citations
20 Claims
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1. A nanopyramid light-emitting diode comprising:
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a silicon substrate; a III-nitride layer deposited on the silicon substrate; a metal layer deposited on the III-nitride layer; and a III-nitride nanopyramid light-emitting diode grown in ohmic contact with the metal layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for forming a nanopyramid light-emitting diode, the method comprising:
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obtaining a silicon substrate; depositing a III-nitride layer on the silicon substrate; depositing a metal layer on the III-nitride layer; depositing a dielectric growth layer on the metal layer; etching a dielectric growth template in the dielectric growth layer; growing III-nitride nanopyramid light emitting diodes through the dielectric growth template in ohmic contact with the metal layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification