SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
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1. A semiconductor device comprising:
- a gate electrode on an insulating surface;
a gate insulating film over the gate electrode;
an oxide semiconductor film over the gate insulating film;
a source electrode and a drain electrode over the oxide semiconductor film;
an insulating film over the oxide semiconductor film, the source electrode, and the drain electrode and in contact with the oxide semiconductor film; and
a back gate electrode over the insulating film and overlapping with the gate electrode and the oxide semiconductor film,wherein the back gate electrode includes a hydrogen absorbing alloy.
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Abstract
An object is to provide a method for manufacturing a highly reliable semiconductor device which includes a thin film transistor using an oxide semiconductor and having stable electric characteristics. In manufacture of a semiconductor device in which an oxide semiconductor is used for a channel formation region, after an oxide semiconductor film is formed, a conductive film including a metal, a metal compound, or an alloy that can absorb or adsorb moisture, a hydroxy group, or hydrogen is formed to overlap with the oxide semiconductor film with an insulating film provided therebetween. Then, heat treatment is performed in the state where the conductive film is exposed; in such a manner, activation treatment for removing moisture, oxygen, hydrogen, or the like adsorbed onto a surface of or in the conductive film is performed.
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Citations
36 Claims
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1. A semiconductor device comprising:
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a gate electrode on an insulating surface; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; a source electrode and a drain electrode over the oxide semiconductor film; an insulating film over the oxide semiconductor film, the source electrode, and the drain electrode and in contact with the oxide semiconductor film; and a back gate electrode over the insulating film and overlapping with the gate electrode and the oxide semiconductor film, wherein the back gate electrode includes a hydrogen absorbing alloy. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device comprising:
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a gate electrode on an insulating surface; a gate insulating film over the gate electrode; a source electrode and a drain electrode over the gate insulating film; an oxide semiconductor film over the source electrode and the drain electrode; an insulating film over the oxide semiconductor film, the source electrode, and the drain electrode and in contact with the oxide semiconductor film; and a back gate electrode over the insulating film and overlapping with the gate electrode and the oxide semiconductor film, wherein the back gate electrode includes a hydrogen absorbing alloy. - View Dependent Claims (6, 7, 8)
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9. A semiconductor device comprising:
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a gate electrode on all insulating surface; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; a channel protective film over the oxide semiconductor film; a source electrode and a drain electrode over the oxide semiconductor film; an insulating film over the channel protective film, the source electrode, and the drain electrode; and a back gate electrode over the insulating film and overlapping with the gate electrode and the oxide semiconductor film, wherein the back gate electrode includes a hydrogen absorbing alloy. - View Dependent Claims (10, 11, 12)
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13. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate insulating film over a gate electrode on an insulating surface; forming an oxide semiconductor film over the gate insulating film; forming a source electrode and a drain electrode over the oxide semiconductor film; forming an insulating film over the oxide semiconductor film, the source electrode, and the drain electrode and in contact with the oxide semiconductor film; forming a back gate electrode over the insulating film to overlap with the gate electrode and the oxide semiconductor film; and performing heat treatment in a state where the back gate electrode is exposed. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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21. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate insulating film over a gate electrode on an insulating surface; forming a source electrode and a drain electrode over the gate insulating film; forming an oxide semiconductor film over the source electrode and the drain electrode; forming an insulating film over the oxide semiconductor film, the source electrode, and the drain electrode and in contact with the oxide semiconductor film; forming a back gate electrode over the insulating film to overlap with the gate electrode and the oxide semiconductor film; and performing heat treatment in a state where the back gate electrode is exposed. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28)
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29. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate insulating film over a gate electrode on an insulating surface; forming an oxide semiconductor film over the gate insulating film; forming a channel protective film over the oxide semiconductor film; forming a source electrode and a drain electrode over the oxide semiconductor film; forming an insulating film over the channel protective film, the source electrode, and the drain electrode; forming a back gate electrode over the insulating film to overlap with the gate electrode and the oxide semiconductor film; and performing heat treatment in a state where the back gate electrode is exposed. - View Dependent Claims (30, 31, 32, 33, 34, 35, 36)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsAkimoto, Kengo
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current257/43
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CPC Class CodesH01L 27/1225 with semiconductor material...H01L 29/41733 for thin film transistors w...H01L 29/42384 for thin film field effect ...H01L 29/78603 characterised by the insula...H01L 29/7869 having a semiconductor body...
