LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A light-emitting diode, comprising:
- a bonding substrate comprising a first surface and a second surface on opposite sides;
a first conductivity type electrode disposed on the second surface of the bonding substrate;
a bonding layer disposed on the first surface of the bonding substrate;
an epitaxial structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked on the bonding layer in sequence, wherein the first conductivity type semiconductor layer and the second conductivity type semiconductor layer have different conductivity types, and a trench is set around the epitaxial structure and extends from the second conductivity type semiconductor layer to the first conductivity type semiconductor layer;
a second conductivity type electrode electrically connected to the second conductivity type semiconductor layer; and
a growth substrate disposed on the epitaxial structure, wherein the growth substrate comprises a cavity exposing a portion of the epitaxial structure and the trench.
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Accused Products
Abstract
A light-emitting diode and a method for manufacturing the same are described. The light-emitting diode includes a bonding substrate, a first conductivity type electrode, a bonding layer, an epitaxial structure, a second conductivity type electrode, a growth substrate and an encapsulant layer. The first conductivity type electrode and the bonding layer are respectively disposed on two surfaces of the bonding substrate. The epitaxial structure includes a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A trench is set around the epitaxial structure and extends from the second conductivity type semiconductor layer to the first conductivity type semiconductor layer. The second conductivity type electrode is electrically connected to the second conductivity type semiconductor layer. The growth substrate is disposed on the epitaxial structure and includes a cavity exposing the epitaxial structure and the trench. The encapsulant layer is filled in the cavity.
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Citations
20 Claims
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1. A light-emitting diode, comprising:
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a bonding substrate comprising a first surface and a second surface on opposite sides; a first conductivity type electrode disposed on the second surface of the bonding substrate; a bonding layer disposed on the first surface of the bonding substrate; an epitaxial structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked on the bonding layer in sequence, wherein the first conductivity type semiconductor layer and the second conductivity type semiconductor layer have different conductivity types, and a trench is set around the epitaxial structure and extends from the second conductivity type semiconductor layer to the first conductivity type semiconductor layer; a second conductivity type electrode electrically connected to the second conductivity type semiconductor layer; and a growth substrate disposed on the epitaxial structure, wherein the growth substrate comprises a cavity exposing a portion of the epitaxial structure and the trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification