VERTICAL GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME

• US 20110079813A1
• Filed: 12/15/2010
• Published: 04/07/2011
• Est. Priority Date: 08/23/2006
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Beom, Choi Seok, Won, Oh Bang, Woo, Kim Dong, Go, Baik Doo, Ho, Yoon Sang, Yeol, Lee Su, Tae, Yeo In, Sung, Jang Tae, Gun, Woo Jong
• Application Number:
  US12/969,166
• Publication Number:
  US 20110079813A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.

Claims

1-24. -24. (canceled)

25. A vertical GaN-based LED comprising:

an n-electrode;

an n-type GaN-based semiconductor layer formed under the n-electrode;

an active layer formed under the n-type GaN-based semiconductor layer;

a p-type GaN-based semiconductor layer formed under the active layer;

a plurality of reflecting electrodes formed under the p-type GaN-based semiconductor layer so as to be spaced at a predetermined distance from each other;

a barrier layer formed under the p-type GaN-based semiconductor layer including the reflecting electrodes; and

a structure support layer formed under the barrier layer.

26. The vertical GaN-based LED according to claim 25,

wherein the reflecting electrode is formed with a single-layer or multi-layer structure composed of one or more elements selected from the group consisting of Pd, Ni, Au, Ag, Cu, Pt, Co, Rh, Ir, Ru, Mo, W and an alloy including at least one of the elements.

27. The vertical GaN-based LED according to claim 25,

wherein the reflecting electrode is formed in any shape selected from the group consisting of an equilateral polygon, a circle, an asymmetric polygon, an ellipse, and a combination thereof.

28. The vertical GaN-based LED according to claim 25,

wherein the reflecting electrode is formed to have a width of 0.5 to 500 μ

m.

29. The vertical GaN-based LED according to claim 25,

wherein the barrier layer is formed of metal or TCO (transparent conductive oxide).

30. The vertical GaN-based LED according to claim 29,

wherein the metal is formed with a single-layer or multi-layer structure composed of one or more elements selected from the group consisting of Al, Ti, Zr, Hf, Ta, Cr, In, Sn, Pt, Au and an alloy including at least one of the elements.

31. The vertical GaN-based LED according to claim 29,

wherein the TCO is one of ITO (indium tin oxide), IZO (indium zinc oxide), IO (indium oxide), ZnO, and SnO₂.

32. The vertical GaN-based LED according to claim 25,

wherein the barrier layer composed of an insulating film is formed to expose portions of the reflecting electrodes such that the reflecting electrodes are electrically connected to the structure support layer.

33. The vertical GaN-based LED according to claim 32,

wherein the insulating film is composed of any one of SiO₂, Al₂O₃, TiO₂, ZrO, HfO, SiN, and AlN.

34. The vertical GaN-based LED according to claim 25 further comprising

a bonding layer formed between the barrier layer and the structure support layer.

35. A vertical GaN-based LED comprising:

an n-electrode;

an n-type GaN-based semiconductor layer formed under the n-electrode;

an active layer formed under the n-type GaN-based semiconductor layer;

a p-type GaN-based semiconductor layer formed under the active layer;

a plurality of barrier layers formed under the p-type GaN-based semiconductor layer so as to be spaced at a predetermined distance from each other;

a reflecting electrode formed under the p-type GaN-based semiconductor layer including the barrier layers; and

a structure support layer formed under the reflecting electrode.

36. The vertical GaN-based LED according to claim 35,

wherein the barrier layer is formed of an insulating film.

37-45. -45. (canceled)