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METAL GATE FET HAVING REDUCED THRESHOLD VOLTAGE ROLL-OFF

  • US 20110079828A1
  • Filed: 10/05/2009
  • Published: 04/07/2011
  • Est. Priority Date: 10/05/2009
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor structure, comprising:

  • forming a gate dielectric material on a substrate;

    forming a gate electrode material on the gate dielectric material; and

    altering a first portion of the gate electrode material,wherein the altering causes the first portion of the gate electrode material to have a first work function that is different than a second work function associated with a second portion of the gate electrode material.

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