Planar TMBS rectifier
6 Assignments
0 Petitions
Accused Products
Abstract
A monolithically integrated trench FET and Schottky diode includes a plurality of trenches extending into a FET region and a Schottky region of a semiconductor layer. A trench in the Schottky region includes a dielectric layer lining the trench sidewalls, and a conductive electrode having a top surface that is substantially coplanar with a top surface of the semiconductor layer adjacent the trench. An interconnect layer electrically contacts the semiconductor layer in the Schottky region so as to form a Schottky contact with the semiconductor layer.
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Citations
36 Claims
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1-29. -29. (canceled)
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30. A trench MOS barrier schottky (TMBS) rectifier comprising:
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a plurality of trenches extending into a semiconductor layer, a dielectric layer lining the trench sidewalls; a conductive electrode having a top surface that is substantially coplanar with a top surface of the semiconductor layer adjacent the trench; and an interconnect layer comprising a conformal barrier metal layer which contacts the semiconductor layer so as to form a schottky contact with the semiconductor layer. - View Dependent Claims (31, 32, 33, 34, 36)
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35. A trench MOS barrier schottky (TMBS) rectifier comprising:
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a plurality of trenches extending into a semiconductor layer, a dielectric layer lining the trench sidewalls; a conductive electrode having a top surface that is substantially coplanar with a top surface of the semiconductor layer adjacent the trench; and an interconnect layer comprising a conformal barrier metal layer contacting the semiconductor layer so as to form a schottky contact with the semiconductor layer, the conformal barrier layer extending over and directly contacting the conductive electrode in each trench, a top surface of the conductive electrode in each trench being substantially coplanar with a top surface of the semiconductor layer such that the conformal barrier metal layer is substantially planar.
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Specification