SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
First Claim
1. A method of fabricating a semiconductor device, comprising:
- forming a polysilicon layer on a substrate;
doping an N-type dopant into the polysilicon layer;
removing a portion of the polysilicon layer to form a plurality of dummy patterns, each of the plurality of dummy patterns having a top, a bottom, and a neck arranged between the top and the bottom, wherein a width of the neck is narrower than a width of the top;
forming a dielectric layer on the substrate, the dielectric layer covering the substrate disposed between two adjacent dummy patterns and exposing the top of each dummy pattern;
removing the plurality of dummy patterns to form a plurality of trenches in the dielectric layer; and
forming a plurality of gate structures in the trenches respectively.
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Accused Products
Abstract
A semiconductor device and a method for fabricating the same are described. A polysilicon layer is formed on a substrate. The polysilicon layer is doped with an N-type dopant. A portion of the polysilicon layer is then removed to form a plurality of dummy patterns. Each dummy pattern has a top, a bottom, and a neck arranged between the top and the bottom, where the width of the neck is narrower than that of the top. A dielectric layer is formed on the substrate to cover the substrate disposed between adjacent dummy patterns, and the top of each dummy pattern is exposed. Thereafter, the dummy patterns are removed to form a plurality of trenches in the dielectric layer. A plurality of gate structures is formed in the trenches, respectively.
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Citations
20 Claims
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1. A method of fabricating a semiconductor device, comprising:
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forming a polysilicon layer on a substrate; doping an N-type dopant into the polysilicon layer; removing a portion of the polysilicon layer to form a plurality of dummy patterns, each of the plurality of dummy patterns having a top, a bottom, and a neck arranged between the top and the bottom, wherein a width of the neck is narrower than a width of the top; forming a dielectric layer on the substrate, the dielectric layer covering the substrate disposed between two adjacent dummy patterns and exposing the top of each dummy pattern; removing the plurality of dummy patterns to form a plurality of trenches in the dielectric layer; and forming a plurality of gate structures in the trenches respectively. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A semiconductor device, comprising:
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a substrate, disposed with a dielectric layer thereon, wherein a trench is disposed in the dielectric layer; a gate structure, located in the trench and comprising a high dielectric constant layer, a work function metal layer, and a metal layer sequentially disposed on the substrate; and a source/drain region, disposed in the substrate at respective sides of the gate structure, wherein the trench comprises a top, a bottom, and a neck arranged between the top and the bottom, a width of the neck is narrower than a width of the top, and the width of the neck is narrower than or equal to a width of the bottom. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification