METHOD AND ARRANGEMENT FOR PRODUCING AN N-SEMICONDUCTIVE INDIUM SULFIDE THIN LAYER
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Abstract
A method of producing, at atmospheric pressure, an n-type semiconductive indium sulfide thin film on a substrate using an indium-containing precursor, hydrogen sulfide as a reactive gaseous precursor, and an inert carrier gas stream includes cyclically repeating first and second steps so as to produce an indium sulfide thin film of a desired thickness. The first method phase includes converting the indium-containing precursor to at least one of a dissolved and a gaseous phase, heating the substrate to a temperature in a range of 100° C. to 275° C., directing the indium containing precursor onto the substrate and supplying hydrogen sulfide to the indium-containing precursor in a mixing zone in an amount so as to provide an absolute concentration of hydrogen sulfide that is greater than zero and no greater than 1% by volume. The indium concentration of the indium-containing precursor is set so as to produce a compact In(OHx,Xy,Sz)3 film, where X=halide and x+y+2z=1 with z≠0. The second step includes setting a temperature of the substrate in a range of 18° C. and 450° C. and directing hydrogen sulfide onto the substrate in an absolute concentration up to 100%.
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Citations
42 Claims
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1-19. -19. (canceled)
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20. A method of producing an n-type semiconductive indium sulfide thin film on a substrate using an indium-containing precursor, hydrogen sulfide as a reactive gaseous precursor, and an inert carrier gas stream, the method being carried out at atmospheric pressure and comprising:
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a) converting the indium-containing precursor to at least one of a dissolved and a gaseous phase, heating the substrate to a temperature in a range of 100°
C. to 275°
C., anddirecting the converted indium containing precursor onto the substrate and supplying hydrogen sulfide to the indium-containing precursor in an amount so as to provide an absolute concentration of hydrogen sulfide that is greater than zero and no greater than 1% by volume in a mixing zone, wherein the indium concentration of the indium-containing precursor is set so as to produce a compact In(OHx,Xy,Sz)3 film, where X=halide and x+y+2z=1 with z≠
0,b) setting a temperature of the substrate in a range of 18°
C. and 450°
C., anddirecting onto the substrate hydrogen sulfide in an absolute concentration up to 100%; and cyclically repeating steps a) and b) so as to produce an indium sulfide thin film of a desired thickness. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38)
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39. A system for producing an n-type semiconductive indium sulfide thin film on a substrate, the system comprising:
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a heatable substrate holder; and a flow-through reaction vessel including, a first supply line of hydrogen sulfide including a control valve, and a second supply line of at least an indium-containing precursor that is at least one of dissolved and gaseous, the second supply line including a shut-off valve, wherein the system is configured for cyclically repeating steps a) and b) so as to form an n-type semiconductive indium sulfide thin film of a desired thickness, steps a) and b) comprising; a) heating the substrate to a temperature in a range of 100°
C. to 275°
C., and directing the converted indium containing precursor onto the substrate and supplying hydrogen sulfide to the indium-containing precursor in an amount so as to provide an absolute concentration of hydrogen sulfide that is greater than zero and no greater than 1% by volume in a mixing zone,wherein the indium concentration of the indium-containing precursor is set so as to produce a compact In(OHxXy,Sz)3 film, where X=halide and x+y+2z=1 with z≠
0,b) setting a temperature of the substrate in a range of 18°
C. and 450°
C., anddirecting onto the substrate hydrogen sulfide in an absolute concentration up to 100%.
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40. A system for producing an n-type semiconductive indium sulfide thin film on a substrate, the system comprising:
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a heatable substrate holder; and a flow-through reaction vessel including, a first station having a first supply line of hydrogen sulfide and a second supply line of at least an indium-containing precursor that is at least one of dissolved and gaseous, and a second station having a third supply line of hydrogen sulfide wherein the system is configured to perform a process comprising; a) at the first station;
heating the substrate to a temperature in a range of 100°
C. to 275°
C. in the first station, supplying hydrogen sulfide to the indium-containing precursor in a mixing zone in an amount so as to provide an absolute concentration of hydrogen sulfide that is greater than zero and no greater than 1% by volume, and directing the indium containing precursor onto the substrate, wherein the indium concentration of the indium-containing precursor is set so as to produce a compact In(OHx,Xy,Sz)3 film, where X=halide and x+y+2z=1 with z≠
0, andb) at the second station;
setting a temperature of the substrate in a range of 18°
C. and 450°
C. in the second station, and directing hydrogen sulfide onto the substrate in an absolute concentration up to 100%,wherein steps a) and b) are repeatable in the reaction vessel so as to form an n-type semiconductive indium sulfide thin film of a desired thickness. - View Dependent Claims (41, 42)
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Specification