METHOD FOR REMOVING ELECTRICITY AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A method for removing electricity, comprising the steps of:
- suppressing generation of a static charge which is caused by wind at a surface of a substrate provided with a thin film transistor by blocking wind; and
heating the substrate to transfer internal charges to an atmosphere over the substrate and holding the atmosphere.
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Accused Products
Abstract
An object is to suppress a significant change in electrical characteristics of thin film transistors and a deviation thereof from the designed range due to static electricity, and to improve the yield in manufacturing semiconductor devices. In order to prevent a substrate from being charged with static electricity by heat treatment or to favorably reduce static electricity with which a substrate is charged in a manufacturing process of a semiconductor device, heat treatment is performed with a substrate provided with a thin film transistor stored in a conductive container. In addition, a heating apparatus for performing the heat treatment is electrically connected to a ground potential, and the container and the substrate are also electrically connected to the ground potential.
16 Citations
10 Claims
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1. A method for removing electricity, comprising the steps of:
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suppressing generation of a static charge which is caused by wind at a surface of a substrate provided with a thin film transistor by blocking wind; and heating the substrate to transfer internal charges to an atmosphere over the substrate and holding the atmosphere.
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2. A method for removing electricity, comprising the steps of:
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placing a substrate provided with a thin film transistor in a conductive container; and performing a heat treatment to suppress presence of a static charge at a surface of the substrate provided with the thin film transistor or suppress generation of a static charge which is caused by wind.
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3. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a thin film transistor including an oxide semiconductor layer over a substrate; performing a heat treatment with the substrate provided with the thin film transistor stored in a conductive container. - View Dependent Claims (4, 5, 6)
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7. A method for removing electricity, comprising the steps of:
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wrapping a substrate provided with a thin film transistor in metal foil; and performing a heat treatment to suppress presence of a static charge at a surface of the substrate provided with the thin film transistor or suppress generation of a static charge which is caused by wind.
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8. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a thin film transistor including an oxide semiconductor layer over a substrate; and performing a heat treatment with the substrate provided with the thin film transistor wrapped in conductive metal foil. - View Dependent Claims (9, 10)
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Specification