SURFACE MODIFICATION FOR HANDLING WAFER THINNING PROCESS
First Claim
Patent Images
1. A method, comprising:
- providing a semiconductor substrate having a first surface and a second surface;
forming a through via extending into the semiconductor substrate from the first surface toward the second surface;
forming a first interconnect structure overlying the first surface of the semiconductor substrate and being electrically connected to the through via;
forming a dielectric buffer layer overlying the first interconnect structure;
forming a dielectric film on the dielectric buffer layer; and
attaching a carrier to the dielectric film of the semiconductor substrate by using an adhesive layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A wafer is provided with a through via extending a portion of a substrate, an interconnect structure electrically connecting the through via, and a polyimide layer formed on the interconnect structure. Surface modification of the polyimide layer is the formation of a thin dielectric film on the polyimide layer by coating, plasma treatment, chemical treatment, or deposition methods. The thin dielectric film is adhered strongly to the polyimide layer, which can reduce the adhesion between the wafer surface and an adhesive layer formed in subsequent carrier attaching process.
-
Citations
20 Claims
-
1. A method, comprising:
-
providing a semiconductor substrate having a first surface and a second surface; forming a through via extending into the semiconductor substrate from the first surface toward the second surface; forming a first interconnect structure overlying the first surface of the semiconductor substrate and being electrically connected to the through via; forming a dielectric buffer layer overlying the first interconnect structure; forming a dielectric film on the dielectric buffer layer; and attaching a carrier to the dielectric film of the semiconductor substrate by using an adhesive layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A method, comprising:
-
providing a wafer comprising a semiconductor substrate having a first surface and a second surface;
forming a through via extending into a portion of the semiconductor substrate from the first surface of the semiconductor substrate toward the second surface of the semiconductor substrate;forming a first interconnect structure overlying the first surface of the semiconductor substrate and being electrically connected to the through via; forming a polyimide layer overlying the first interconnect structure; and forming a polyimide surface modification film deposited on the polyimide layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
-
Specification