POST-PLANARIZATION DENSIFICATION

• US 20110081782A1
• Filed: 05/26/2010
• Published: 04/07/2011
• Est. Priority Date: 10/05/2009
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Venkataraman, Shankar, Ingle, Nitin K., Liang, Jingmei
• Granted Patent: US 8,329,587 B2
• Time in Patent Office: Days
• US Class Current: 438/697
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02337 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/31055 the removal being a chemical etching step, e.g. dry etching etching per se H01L21/311
• CPC Class Codes: H01L 21/316 composed of oxides or glassy oxides or oxide based glass
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process
• CPC Class Codes: H01L 21/76229 Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches

Abstract

Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow and wide trenches/open areas become more similar following the treatment which allows the etch rates to match more closely. This effect may also be described as a reduction in the pattern loading effect. The process involves forming then planarizing silicon oxide. Planarization exposes a new dielectric interface disposed closer to the narrow trenches. The newly exposed interface facilitates a densification treatment by annealing and/or exposing the planarized surface to a plasma.

Claims

1. A method of processing a silicon-and-oxygen-containing layer on a patterned substrate having a narrow trench and a recessed open area, the method comprising:

forming a silicon-and-oxygen-containing layer on the patterned substrate including in the narrow trench and in the recessed open area;

planarizing the silicon-and-oxygen-containing layer leaving a narrow gapfill portion in the narrow trench and a wide gapfill portion in the recessed open area, wherein planarizing the silicon-and-oxygen-containing layer comprises removing a portion of the silicon-and-oxygen-containing layer above the narrow trench and exposing a post-planarization dielectric interface disposed closer to the narrow trench than a corresponding pre-planarization dielectric interface; and

treating the substrate, after the planarizing operation, to increase a density of the narrow gapfill portion, wherein the post-planarization dielectric interface disposed closer to the narrow trench allows the narrow gapfill portion to become denser than had the substrate been treated before the planarizing operation.

2. The method of claim 1 wherein forming the silicon-and-oxygen-containing layer comprises:

flowing a plasma precursor into a remote plasma region to form plasma effluents;

combining the plasma effluents with a flow of a silicon-containing precursor in a substrate processing region, wherein the flow of the silicon-containing precursor has not been excited by a plasma; and

curing the silicon-and-nitrogen-containing layer in an ozone containing atmosphere to convert the layer into a silicon-and-oxygen-containing layer.

3. The method of claim 1 wherein the open area is a wide trench having a width greater than one of 50 nm, 100 nm, 200 nm, 500 nm or 1000 nm.

4. The method of claim 1 wherein the narrow trench has a width less than one of 100 nm, 70 nm, 50 nm, 35 nm, 25 nm or 20 nm.

5. The method of claim 1 wherein the etch rate of the wide gapfill portion, after treating the substrate to increase a density, is within one of 20%, 15%, 10%, 7%, 5% or 3% of the etch rate of the narrow gapfill portion.

6. The method of claim 1 wherein the operation of treating the substrate to increase a density comprises exposing the substrate to a plasma in an atmosphere comprising an inert gas.

7. The method of claim 6 wherein the atmosphere further comprises oxygen.

8. The method of claim 7 wherein the atmosphere further comprises hydrogen.

9. The method of claim 1 wherein the operation of treating the substrate to increase a density comprises annealing the substrate above or about 400°

C., 500°

C., 600°

C., 700°

C. or 800°

C. increase the density of the narrow gapfill portion.

10. The method of claim 1 wherein the operation of planarizing the silicon-and-oxygen-containing layer comprises chemical-mechanically polishing the substrate.

11. The method of claim 1 wherein the operation of planarizing the silicon-and-oxygen-containing layer comprises performing a planarizing etch on the substrate.

12. The method of claim 1 wherein the operation of treating the substrate to increase a density also results in an increase in density of the wide gapfill portion.

13. The method of claim 1 wherein the operation of treating the substrate to increase a density comprises sequentially exposing the substrate to a plasma and then annealing the substrate.

14. The method of claim 1 wherein the operation of treating the substrate to increase a density comprises sequentially annealing the substrate and then exposing the substrate to a plasma.

15. The method of claim 1 further comprising annealing the silicon-and-oxygen-containing layer in an oxygen-containing atmosphere at a substrate temperature greater than one of 500°

C., 600°

C., 700°

C. or 800°

C. before planarizing the silicon-and-oxygen-containing layer.

16. The method of claim 1 wherein the silicon-and-oxygen-containing layer consists essentially of silicon and oxygen after the operation of treating the silicon-and-oxygen-containing layer.

17. The method of claim 1 wherein the silicon-and-oxygen-containing layer comprises at least one of Spin-On-Glass (SOG), Plasma-Enhanced CVD (PECVD) silicon oxide, Flowable CVD (FCVD) silicon oxide, Sub-Atmospheric CVD (SACVD) silicon oxide, TEOS-ozone silicon oxide, TEOS-ozone-H₂O silicon oxide, Undoped Silicate Glass (USG) and Boron-Phosphate Silicate Glass (BPSG).