POST-PLANARIZATION DENSIFICATION
First Claim
1. A method of processing a silicon-and-oxygen-containing layer on a patterned substrate having a narrow trench and a recessed open area, the method comprising:
- forming a silicon-and-oxygen-containing layer on the patterned substrate including in the narrow trench and in the recessed open area;
planarizing the silicon-and-oxygen-containing layer leaving a narrow gapfill portion in the narrow trench and a wide gapfill portion in the recessed open area, wherein planarizing the silicon-and-oxygen-containing layer comprises removing a portion of the silicon-and-oxygen-containing layer above the narrow trench and exposing a post-planarization dielectric interface disposed closer to the narrow trench than a corresponding pre-planarization dielectric interface; and
treating the substrate, after the planarizing operation, to increase a density of the narrow gapfill portion, wherein the post-planarization dielectric interface disposed closer to the narrow trench allows the narrow gapfill portion to become denser than had the substrate been treated before the planarizing operation.
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Accused Products
Abstract
Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow and wide trenches/open areas become more similar following the treatment which allows the etch rates to match more closely. This effect may also be described as a reduction in the pattern loading effect. The process involves forming then planarizing silicon oxide. Planarization exposes a new dielectric interface disposed closer to the narrow trenches. The newly exposed interface facilitates a densification treatment by annealing and/or exposing the planarized surface to a plasma.
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Citations
17 Claims
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1. A method of processing a silicon-and-oxygen-containing layer on a patterned substrate having a narrow trench and a recessed open area, the method comprising:
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forming a silicon-and-oxygen-containing layer on the patterned substrate including in the narrow trench and in the recessed open area; planarizing the silicon-and-oxygen-containing layer leaving a narrow gapfill portion in the narrow trench and a wide gapfill portion in the recessed open area, wherein planarizing the silicon-and-oxygen-containing layer comprises removing a portion of the silicon-and-oxygen-containing layer above the narrow trench and exposing a post-planarization dielectric interface disposed closer to the narrow trench than a corresponding pre-planarization dielectric interface; and treating the substrate, after the planarizing operation, to increase a density of the narrow gapfill portion, wherein the post-planarization dielectric interface disposed closer to the narrow trench allows the narrow gapfill portion to become denser than had the substrate been treated before the planarizing operation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification