METHOD FOR GRINDING A SEMICONDUCTOR WAFER

• US 20110081836A1
• Filed: 09/30/2010
• Published: 04/07/2011
• Est. Priority Date: 10/07/2009
• Status: Active Grant

• Current Assignee: Siltronic AG (Dr. Alexander Wacker Familiengesellschaft Mit Beschrã¤Nkter Haftung)
• Original Assignee: Siltronic AG (Dr. Alexander Wacker Familiengesellschaft Mit Beschrã¤Nkter Haftung)
• Inventors: SCHWANDNER, Juergen
• Granted Patent: US 8,501,028 B2
• Time in Patent Office: Days
• US Class Current: 451/41
• CPC Class Codes: H01L 21/02013 Grinding, lapping

Abstract

A method for processing a semiconductor wafer includes bringing at least one grinding tool in contact with the semiconductor wafer; removing material from the semiconductor wafer using the grinding tool; disposing a liquid medium having a viscosity of at least 3×10⁻³ N/m²·s and at most 100×10⁻³ N/m²·s between the at least one grinding tool and the semiconductor wafer; and separating the at least one grinding tool and the semiconductor wafer so as to end the processing.

Claims

1. A method for processing a semiconductor wafer comprising:

bringing at least one grinding tool in contact with the semiconductor wafer;

removing material from the semiconductor wafer using the grinding tool;

disposing a liquid medium having a viscosity of at least 3×

10<sup>−

3</sup> N/m²·

s and at most 100×

10<sup>−

3</sup> N/m²·

s between the at least one grinding tool and the semiconductor wafer; and

separating the at least one grinding tool and the semiconductor wafer so as to end the processing.

2. The method as recited in claim 1, wherein the liquid medium includes a polyhydric alcohol.

3. The method as recited in claim 2, wherein the polyhydric alcohol is selected from the group consisting of glycerol, monomeric glycols, oligomeric glycols, polyglycols and polyalcohols.

4. The method as recited in claim 2, wherein a proportion of the polyhydric alcohol in the liquid medium is 0.01 to 10% by volume.

5. The method as recited in claim 1, wherein the liquid medium includes glycerol.

6. The method as recited in claim 1, wherein the liquid medium includes polyether polyol and polyvinyl alcohol.

7. The method as recited in claim 1, wherein the liquid medium includes small amounts of surfactants.

8. The method as recited in claim 5, wherein the liquid medium is a glycerol-water mixture having a glycerol proportion of 50%-85%.

9. The method as recited in claim 1, wherein the liquid medium is an aqueous mixture containing glycerol, butanol and a surfactant.

10. The method as recited in claim 1, wherein the liquid medium includes solids in a form of one of silicon dioxide and cerium oxide particles.

11. The method as recited in claim 10, wherein an average particle size of the silicon dioxide and the cerium oxide is 5-50 nm.

12. The method as recited in claim 10, wherein a proportion of the solids is greater than 1% by weight and at most 50% by weight.

13. The method as recited in claim 12, wherein the proportion of the solids is 1-30% by weight.

14. The method as recited in claim 1, further comprising fixedly holding the semiconductor wafer by a first surface of the wafer using a wafer holder, wherein the at least one grinding tool includes a grinding disk and wherein the removing the material is performed by processing a second surface of the wafer using the grinding disk, the wafer and the grinding disk rotating and being pressed against one another, and wherein the disposing the liquid medium is performed by introducing the liquid medium between the grinding disk and the semiconductor wafer via an opening in the grinding disk.

15. The method as recited in claim 1, wherein the at least one grinding tool includes two grinding tools mounted on opposite collinear spindles, and wherein the removing the material includes processing a first and a second side of the semiconductor wafer simultaneously, the semiconductor wafer floating freely between the two grinding tools, the processing guided in a manner substantially free of constraining forces axially between a water or air cushion acting on the first and second sides, and wherein the disposing the liquid medium is performed by introducing the liquid medium between the grinding disk and the semiconductor wafer via an opening in the grinding disk.

16. A method for processing a plurality of semiconductor wafers simultaneously comprising:

disposing each of the plurality of semiconductor wafers in a cutout of a respective one of a plurality of carriers, each semiconductor wafer lying in a freely movable manner in a cutout in one of a plurality of carriers;

rotating each of the plurality of carriers using a ring-shaped outer drive ring and a ring-shaped inner drive ring on a cycloidal trajectory;

disposing the plurality of semiconductor wafers between rotating ring-shaped working disks having working layers;

removing material from each of the plurality of semiconductor wafers; and

disposing a liquid medium between the working disks and the plurality of semiconductor wafers via an opening in the carriers, the liquid medium having a viscosity of at least 3×

10<sup>−

3</sup> N/m²·

s and at most 100×

10<sup>−

3</sup> N/m²·

s.