GAS CLUSTER ION BEAM PROCESSING METHOD FOR PREPARING AN ISOLATION LAYER IN NON-PLANAR GATE STRUCTURES
First Claim
1. A gas cluster ion beam (GCIB) processing method for preparing an isolation layer in a non-planar gate structure, comprising:
- forming said non-planar gate structure on a substrate;
generating a GCIB formed from a material source for forming an isolation layer or said non-planar gate structure;
selecting a beam energy, a beam energy distribution, a beam focus, and a beam dose to achieve a desired thickness of said isolation layer;
accelerating said GCIB to achieve said beam energy;
focusing said GCIB to achieve said beam focus;
irradiating at least a portion of said substrate including a base surface adjacent a base of said non-planar gate structure with said accelerated GCIB according to said beam dose; and
forming said isolation layer at said base surface using said GCIB to achieve said desired thickness.
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Abstract
A gas cluster ion beam (GCIB) processing method for preparing an isolation layer in a non-planar gate structure is described. The method forms a non-planar gate structure on a substrate. Additionally, the GCIB processing method includes generating a GCIB formed from a material source for forming an isolation layer for the non-planar gate structure. Additionally yet, the GCIB processing method includes selecting a beam energy, a beam energy distribution, a beam focus, and a beam dose to achieve a desired thickness of the isolation layer, accelerating the GCIB to achieve the beam energy, focusing the GCIB to achieve the beam focus, and irradiating at least a portion of the substrate with the accelerated GCIB according to the beam dose. The GCIB processing method forms the isolation layer at a base surface adjacent a base of the non-planar gate structure using the GCIB to achieve the desired thickness.
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Citations
22 Claims
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1. A gas cluster ion beam (GCIB) processing method for preparing an isolation layer in a non-planar gate structure, comprising:
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forming said non-planar gate structure on a substrate; generating a GCIB formed from a material source for forming an isolation layer or said non-planar gate structure; selecting a beam energy, a beam energy distribution, a beam focus, and a beam dose to achieve a desired thickness of said isolation layer; accelerating said GCIB to achieve said beam energy; focusing said GCIB to achieve said beam focus; irradiating at least a portion of said substrate including a base surface adjacent a base of said non-planar gate structure with said accelerated GCIB according to said beam dose; and forming said isolation layer at said base surface using said GCIB to achieve said desired thickness. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification