×

GAS CLUSTER ION BEAM PROCESSING METHOD FOR PREPARING AN ISOLATION LAYER IN NON-PLANAR GATE STRUCTURES

  • US 20110084214A1
  • Filed: 10/08/2009
  • Published: 04/14/2011
  • Est. Priority Date: 10/08/2009
  • Status: Abandoned Application
First Claim
Patent Images

1. A gas cluster ion beam (GCIB) processing method for preparing an isolation layer in a non-planar gate structure, comprising:

  • forming said non-planar gate structure on a substrate;

    generating a GCIB formed from a material source for forming an isolation layer or said non-planar gate structure;

    selecting a beam energy, a beam energy distribution, a beam focus, and a beam dose to achieve a desired thickness of said isolation layer;

    accelerating said GCIB to achieve said beam energy;

    focusing said GCIB to achieve said beam focus;

    irradiating at least a portion of said substrate including a base surface adjacent a base of said non-planar gate structure with said accelerated GCIB according to said beam dose; and

    forming said isolation layer at said base surface using said GCIB to achieve said desired thickness.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×