SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor device comprising:
- a gate electrode over an insulating surface;
a gate insulating film over the gate electrode;
an oxide semiconductor film over the gate insulating film, the oxide semiconductor film overlapping with the gate electrode;
a pair of metal oxide films over the oxide semiconductor film; and
a source electrode and a drain electrode over the pair of metal oxide films,wherein the oxide semiconductor film comprises, on the pair of metal oxide films sides, a region where a concentration of one or a plurality of metals in the oxide semiconductor film is higher than a concentration of one or a plurality of metals in other regions of the oxide semiconductor film, andwherein the pair of metal oxide films are formed by oxidation of a metal in the source electrode and the drain electrode.
1 Assignment
0 Petitions
Accused Products
Abstract
An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.
167 Citations
17 Claims
-
1. A semiconductor device comprising:
-
a gate electrode over an insulating surface; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film, the oxide semiconductor film overlapping with the gate electrode; a pair of metal oxide films over the oxide semiconductor film; and a source electrode and a drain electrode over the pair of metal oxide films, wherein the oxide semiconductor film comprises, on the pair of metal oxide films sides, a region where a concentration of one or a plurality of metals in the oxide semiconductor film is higher than a concentration of one or a plurality of metals in other regions of the oxide semiconductor film, and wherein the pair of metal oxide films are formed by oxidation of a metal in the source electrode and the drain electrode. - View Dependent Claims (2, 3, 4, 5)
-
-
6. A semiconductor device comprising:
-
a gate electrode over an insulating surface; a gate insulating film over the gate electrode; an oxide semiconductor film including indium, gallium, and zinc over the gate insulating film, the oxide semiconductor film overlapping with the gate electrode; a pair of metal oxide films over the oxide semiconductor film; and a source electrode and a drain electrode over the pair of metal oxide films, wherein the oxide semiconductor film comprises, on the pair of metal oxide films sides, a region where a concentration of one or a plurality of indium, gallium, and zinc is higher than a concentration of one or a plurality of indium, gallium, and zinc in other regions of the oxide semiconductor film, and wherein the pair of metal oxide films are formed by oxidation of a metal in the source electrode and the drain electrode. - View Dependent Claims (7, 8, 9, 10)
-
-
11. A semiconductor device comprising:
-
a gate electrode over a substrate; a gate insulating film over the gate electrode; an oxide semiconductor film comprising a first metal over the gate insulating film, the oxide semiconductor film overlapping with the gate electrode; a first metal oxide film over the oxide semiconductor film; a second metal oxide film over the oxide semiconductor film; a source electrode over the first metal oxide film, the source electrode being in direct contact with the gate insulating film; and a drain electrode over the second metal oxide film, the drain electrode being in direct contact with the gate insulating film; wherein each of the first metal oxide film, the second metal oxide film, the source electrode and the drain electrode comprises a second metal, wherein a first region of the oxide semiconductor film is adjacent to the first metal oxide film, wherein a second region of the oxide semiconductor film is adjacent to the second metal oxide film, wherein a third region of the oxide semiconductor film is adjacent to the gate insulating film, and wherein a concentration of the first metal in the first region and the second region is higher than the concentration of the first metal in the third region. - View Dependent Claims (12, 13, 14, 15)
-
-
16. A method for manufacturing a semiconductor device, the method comprising the steps of:
-
forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film over the gate insulating film; forming a conductive film over the oxide semiconductor film; conducting a heating treatment for the oxide semiconductor film to form a metal oxide film between the oxide semiconductor film and the conductive film after the forming of the conductive film; and etching the conductive film to form a source electrode and a drain electrode. - View Dependent Claims (17)
-
Specification