Light Emitting Diode and Manufacturing Method Thereof

• US 20110084296A1
• Filed: 08/20/2010
• Published: 04/14/2011
• Est. Priority Date: 10/12/2009
• Status: Abandoned Application

• Current Assignee: Interlight Optotech Corporation
• Original Assignee: Intematix Technology Center Corp. (Intematix Corporation)
• Inventors: Cheng, Tzu-Chi
• Application Number:
  US12/860,543
• Publication Number:
  US 20110084296A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/64 Heat extraction or cooling elements

Abstract

A light emitting diode manufacturing method introduces a transparent enclosure to improve the uniformity of coating phosphor, so as to achieve the purposes of enhancing the uniform color temperature and the light emitting efficiency. The manufacturing method is used extensively for packaging various types of light emitting diode chips and mass production.

Claims

1. A light emitting diode manufacturing method, comprising the steps of:

providing a lead frame;

mounting at least one light emitting diode chip onto the lead frame;

forming at least one transparent enclosure to enclose the light emitting diode chip; and

disposing a mixed resin comprising at least one phosphor in an area enclosed by the transparent enclosure.

2. The light emitting diode manufacturing method of claim 1, wherein a distance is maintained between the transparent enclosure and an edge of the light emitting diode chip.

3. The light emitting diode manufacturing method of claim 2, wherein the mixed resin comprising the phosphor has a predetermined thickness.

4. The light emitting diode manufacturing method of claim 3, wherein the distance from the transparent enclosure to the edge of the light emitting diode chip is not greater than the predetermined thickness of the mixed resin comprising the phosphor.

5. The light emitting diode manufacturing method of claims 1, further comprising a step of electrically coupling the light emitting diode chip to the lead frame.

6. The light emitting diode manufacturing method of claim 5, wherein after the step of mounting at least one light emitting diode chip onto the lead frame, further comprising the step of:

electrically coupling the light emitting diode chip to the lead frame.

7. The light emitting diode manufacturing method of claim 5, wherein after the step of forming at least one transparent enclosure to enclose the light emitting diode chip, further comprising the step of:

electrically coupling the light emitting diode chip to the lead frame.

8. The light emitting diode manufacturing method of claim 1, further comprising a step of planarizing a surface of the mixed resin.

9. The light emitting diode manufacturing method of claim 8, wherein a distance from a surface of the light emitting diode chip to a surface of the mixed resin is greater than or equal to a distance from a side wall of the light emitting diode chip to an inner surface of the transparent enclosure.

10. The light emitting diode manufacturing method of claim 1, further comprising a step of connecting an anode and a cathode of the light emitting diode chip to the lead frame.

11. The light emitting diode manufacturing method of claim 10, further comprising a step of the connecting the anode and the cathode of the light emitting diode chip to a thermal conduction pad of the lead frame.

12. The light emitting diode manufacturing method of claims 1, wherein the phosphor is made of a material selected from the group consisting of Sr_1-x-yBa_xCa_ySiO₄:

Eu²⁺F, (Sr_1-x-yEu_xMn_y)P_2+zO₇;

Eu²⁺F, (Ba,Sr,Ca)Al₂O₄;

Eu, ((Ba,Sr,Ca)(Mg,Zn))Si₂O₇;

Eu, SrGa₂S₄;

Eu, ((Ba,Sr,Ca)_1-xEu_x)(Mg,Zn)_1-xMn_x))Al₁₀O₁₇, Ca₈Mg(SiO₄)Cl₂;

Eu,Mn, ((Ba,Sr,Ca,Mg)_1-xEu_x)₂SiO₄, Ca₂MgSi₂O₇;

Cl, SrSi₃O₈.2SrCl₂;

Eu, BAM;

Eu, Sr-Aluminate;

Eu, Thiogallate;

Eu, Chlorosilicate;

Eu, Borate;

Ce,Tb, Sr₄Al₁₄O₂₅;

Eu, YBO₃;

Ce,Tb, BaMgAl₁₀O₁₇;

Eu,Mn, (Sr,Ca,Ba)(Al,Ga)₂S₄;

Eu, Ca₂MgSi₂O₇;

Cl,Eu,Mn, (Sr,Ca,Ba,Mg)₁₀(PO₄)₆C₁₂;

Eu ZnS;

Cu,Al, (Y,Gd,Tb,Lu,Yb)(Al_yGa_1-y)₅O₁₂;

Ce, (Sr_1-x-y-zBa_xCa_yEu_z)₂SiO₄, (Sr_1-a-bCa_bB_ac)Si_xN_yO_z;

Eu_a and Sr₅(PO₄)₃Cl;

Eu_a or a mixed material of any combination of the above.

13. The light emitting diode manufacturing method of claims 1, wherein the step of forming the resin containing a phosphor in the area enclosed by the enclosure is performed by a method selected from the group consisting of a sputtering method, a chemical vapor deposition method, a spray coating method, a screen coating method, a vacuum evaporation method, a sol-gel method and a dispensing method or any combination of the above.

14. A light emitting diode, comprising:

a lead frame;

a light emitting diode chip mounted onto the lead frame;

a transparent enclosure enclosing the light emitting diode chip; and

a mixed resin containing at least one phosphor and being formed in an area enclosed by the transparent enclosure.

15. The light emitting diode of claim 14, wherein the transparent enclosure and an edge of the light emitting diode chip have a distance.

16. The light emitting diode of claim 15, wherein the mixed resin containing the phosphor has a predetermined thickness.

17. The light emitting diode of claim 16, wherein the distance between the transparent enclosure and the edge of the light emitting diode chip is not greater than the predetermined thickness of the mixed resin containing the phosphor.

18. The light emitting diode of claims 14, wherein the lead frame further comprises an electrically connected circuit coupled to the light emitting diode chip and the lead frame.

19. The light emitting diode of claims 14, wherein the mixed resin has a planarized surface.

20. The light emitting diode of claim 14, wherein a distance from a surface of the light emitting diode chip to a surface of the mixed resin is greater than or equal to a distance from a side wall of the light emitting diode chip to an inner surface of the enclosure.

21. The light emitting diode of claims 14, wherein the lead frame has a bonding area provided for mounting the light emitting diode chip.

22. The light emitting diode of claim 14, further comprising a metal lead provided for connecting the light emitting diode chip onto the lead frame.

23. The light emitting diode of claim 22, wherein the lead frame further comprises a thermal conduction pad, and the metal lead is provided for connecting an anode and a cathode of the light emitting diode chip to the thermal conduction pad.

24. The light emitting diode of claims 14, wherein the phosphor is made of a material selected from the group consisting of Sr_1-x-yBa_xCa_ySiO₄:

Eu²⁺F, (Sr_1-x-yEu_xMn_y)P_2+zO₇;

Eu²⁺F, (Ba,Sr,Ca)Al₂O₄;

Eu, ((Ba,Sr,Ca)(Mg,Zn))Si₂O₇;

Eu, SrGa₂S₄;

Eu, ((Ba,Sr,Ca)_1-xEu_x)(Mg,Zn)_1-xMn_x))Al₁₀O₁₇, Ca₈Mg(SiO₄)₄Cl₂;

Eu,Mn, ((Ba,Sr,Ca,Mg)_1-xEu_x)₂SiO₄, Ca₂MgSi₂O₇;

Cl, SrSi₃O₈.2SrCl₂;

Eu, BAM;

Eu, Sr-Aluminate;

Eu, Thiogallate;

Eu, Chlorosilicate;

Eu, Borate;

Ce,Tb, Sr₄Al₁₄O₂₅;

Eu, YBO₃;

Ce,Tb, BaMgAl₁₀O₁₇;

Eu,Mn, (Sr,Ca,Ba)(Al,Ga)₂S₄;

Eu, Ca₂MgSi₂O₇;

Cl,Eu,Mn, (Sr,Ca,Ba,Mg)₁₀(PO4)₆Cl₂;

Eu ZnS;

Cu,Al, (Y,Gd,Tb,Lu,Yb)(Al_yGa_1-y)₅O₁₂;

Ce, (Sr_1-x-y-zBa_xCa_yEu_z)₂SiO₄, (Sr_1-a-bCa_bBa_c)Si_xN_yO_z;

Eu_a and Sr₅(PO₄)₃Cl;

Eu_a or a mixture of any combination of the above.

25. The light emitting diode of claims 14, wherein the mixed resin is formed in the area enclosed by the enclosure by a method selected from the group consisting of a sputtering method, a chemical vapor deposition method, a spray coating method, a screen coating method, a vacuum evaporation method, a sol-gel method and a dispensing method.