PROCESS FOR PRODUCING SUBSTRATES FREE OF PATTERNS USING AN ALPHA STEPPER TO ENSURE RESULTS
First Claim
1. A method for making an integrated circuit, comprising:
- providing a substrate having a first surface and a second surface;
forming at least one circuit element on the first surface;
performing a thinning process on the second surface to remove material until the substrate is substantially close to but exceeds a first thickness, whereby the thinning process leaves a pattern on the second surface;
performing a chemical mechanical polishing (CMP) process over the substrate to substantially remove the pattern on the second surface;
analyzing the substrate after the CMP process to compare the first thickness to a second thickness; and
if the first thickness is not within a predetermined amount of the second thickness, repeating the CMP process.
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Accused Products
Abstract
The present disclosure provides a method for making an integrated circuit. The method comprises processing a first surface of a substrate to create the integrated circuit and grinding a second surface of the substrate to remove material until the substrate is substantially close to a desire thickness. The method also includes performing a wet etch process over the second surface of the substrate and performing a chemical mechanical polishing (CMP) process over the second surface of the substrate to remove a pattern on the substrate. The second surface of the substrate is examined with a metrological instrument to determine if the second surface is substantially smooth; if the second surface is not substantially smooth, the steps of performing the CMP process and examining the second surface with the metrological instrument are repeated until the second surface is substantially smooth.
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Citations
20 Claims
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1. A method for making an integrated circuit, comprising:
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providing a substrate having a first surface and a second surface; forming at least one circuit element on the first surface; performing a thinning process on the second surface to remove material until the substrate is substantially close to but exceeds a first thickness, whereby the thinning process leaves a pattern on the second surface; performing a chemical mechanical polishing (CMP) process over the substrate to substantially remove the pattern on the second surface; analyzing the substrate after the CMP process to compare the first thickness to a second thickness; and if the first thickness is not within a predetermined amount of the second thickness, repeating the CMP process. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for making an integrated circuit device, comprising:
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proving a substrate having a first surface and a second surface, wherein an integrated circuit is on the first surface; grinding the second surface of the substrate until the substrate is substantially close to a desire thickness; performing a chemical mechanical polishing (CMP) process over the second surface of the substrate; examining the second surface of the substrate with a metrological instrument to determine if the second surface is substantially smooth; if the second surface is not substantially smooth, repeating the steps of performing the CMP process and examining the second surface with the metrological instrument until the second surface is substantially smooth. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A method, performed in sequence, for making a back-side illuminated complementary metal oxide semiconductor (CMOS) image sensor, comprising:
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providing a substrate with at least one pixel device on a first surface; performing a grinding process on a second surface, opposite the first surface, of the substrate until the substrate is substantially close to a desired thickness; performing a wet etching process over the second surface of the substrate to bring it closer to the desired thickness; performing a chemical mechanical polishing (CMP) process on the second surface of the substrate; examining the second surface of the substrate with a profile-detection device to determine if the second surface is substantially smooth; if the substrate is not substantially smooth, repeating the steps of performing the CMP process and examining the substrate until the substrate is substantially smooth. - View Dependent Claims (17, 18, 19, 20)
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Specification