SYSTEMS AND METHODS FOR INTEGRATED CIRCUITS COMPRISING MULTIPLE BODY BIASING DOMAINS
First Claim
1. A method comprising:
- forming an epitaxy layer of a first conductivity type on a semiconductor substrate of the first conductivity type;
forming in the epitaxy layer a wall structure of a second conductivity type around a first region; and
forming in the epitaxy layer a bottom buried structure of the second conductivity type under the first region and connecting the bottom buried structure to the wall structure to electrically isolate the first region from a second region in the epitaxy layer.
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Abstract
Systems and methods for integrated circuits comprising multiple body biasing domains. In accordance with a first embodiment, a semiconductor structure comprises a substrate of first type material. A first closed structure comprising walls of second type material extends from a surface of the substrate to a first depth. A planar deep well of said second type material underlying and coupled to the closed structure extends from the first depth to a second depth. The closed structure and the planar deep well of said second type material form an electrically isolated region of the first type material. A second-type semiconductor device is disposed to receive a first body biasing voltage from the electrically isolated region of the first type material. A well of the second-type material within the electrically isolated region of the first type material is formed and a first-type semiconductor device is disposed to receive a second body biasing voltage from the well of second-type material.
99 Citations
20 Claims
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1. A method comprising:
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forming an epitaxy layer of a first conductivity type on a semiconductor substrate of the first conductivity type; forming in the epitaxy layer a wall structure of a second conductivity type around a first region; and forming in the epitaxy layer a bottom buried structure of the second conductivity type under the first region and connecting the bottom buried structure to the wall structure to electrically isolate the first region from a second region in the epitaxy layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method comprising:
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forming an epitaxy layer of a first conductivity type on a semiconductor substrate of the first conductivity type; forming in the epitaxy layer a wall structure of a second conductivity type around a first region; electrically isolating the first region from a second region in the epitaxy layer, wherein said electrically isolating includes; forming in the epitaxy layer a bottom buried structure of the second conductivity type under the first region, and connecting the bottom buried structure to the wall structure; and forming in the first and second regions a first plurality of transistors of the first conductivity type and a second plurality of transistors of the second conductivity type. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A method comprising:
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forming an epitaxy layer of a first conductivity type on a semiconductor substrate of the first conductivity type; forming in the epitaxy layer a first wall structure of a second conductivity type around a first region and a second wall structure of the second conductivity type around a second region; and electrically isolating the first region from the second region, wherein said electrically isolating includes; forming in the epitaxy layer a first bottom buried structure of the second conductivity type under the first region and a second bottom buried structure of the second conductivity type under the second region, and connecting the first and second bottom buried structures to the first and second wall structures, respectively. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification