PHOTOACOUSTIC GAS DETECTOR
First Claim
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1. A photoacoustic detection device comprising a nanophotonic circuit comprising:
- a plurality of laser diodes (7) capable of emitting at different frequencies;
input couplers (9) connected to optical waveguides;
a multiplexer (13);
an output optical waveguide (15), emerging into a recess;
a tuning fork (18) having its free arms arranged at the level of the output optical waveguide; and
means for detecting the vibration of the tuning fork,all these elements being assembled in a monolithic component.
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Abstract
A photoacoustic detection device including a nanophotonic circuit including a plurality of semiconductor lasers capable of emitting a different frequencies; input couplers connected to optical waveguides; a multiplexer; an output optical waveguide, emerging into a recess; a tuning fork having its free arms arranged at the output of the output optical waveguide; and means for detecting the vibration of the tuning fork, all these elements being assembled in a monolithic component.
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Citations
13 Claims
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1. A photoacoustic detection device comprising a nanophotonic circuit comprising:
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a plurality of laser diodes (7) capable of emitting at different frequencies; input couplers (9) connected to optical waveguides; a multiplexer (13); an output optical waveguide (15), emerging into a recess; a tuning fork (18) having its free arms arranged at the level of the output optical waveguide; and means for detecting the vibration of the tuning fork, all these elements being assembled in a monolithic component. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A photoacoustic detection method and device, comprising the steps of:
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forming on a substrate (30) a first layer (31) and a second layer (32), the first layer (31) being selected from among the materials comprising Si, MgF2, CaF2, SrF2, BaF2, PbF2, CdF, GaAs, AlGaAs, InP, InAs, InSb, ZnS, CdTe, and Al2O3, the second layer (32) being selected from among the materials comprising MgF2, CaF2, SrF2, BaF2, PbF2, CdF, GaAs, AlGaAs, InP, InAs, InSb, ZnS, CdTe, and Al2O3; etching the second layer to form active photonic components and especially a waveguide element (15) and a tuning fork element (18); forming an upper cladding layer (33) above the waveguide portion (15), selected from among the materials comprising MgF2, CaF2, SrF2, BaF2, PbF2, CdF, GaAs, AlGaAs, InP, InAs, InSb, ZnS, CdTe, and Al2O3; forming a cavity under the tuning fork; forming QCL lasers and inserting them into the substrate.
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Specification