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PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND STORAGE MEDIUM

  • US 20110088850A1
  • Filed: 12/20/2010
  • Published: 04/21/2011
  • Est. Priority Date: 03/22/2006
  • Status: Active Grant
First Claim
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1. A plasma processing apparatus comprising:

  • a substrate processing chamber that has therein a processing space into which a substrate is transferred and is configured to carry out plasma processing on the substrate in the processing space;

    a first electrode that is disposed in said substrate processing chamber and is connected to both a first radio frequency power source and a second radio frequency power source;

    a second electrode that has an exposed portion exposed to the processing space and is electrically insulated from said substrate processing chamber and said first electrode, said second electrode being connected to a DC power source; and

    a controller configured to control a value of a DC voltage applied to said second electrode,wherein the DC voltage applies the DC voltage to said second electrode while, to said first electrode, the first radio frequency power source supplies a first radio frequency electrical power and the second radio frequency power source supplies a second radio frequency electrical power having a lower frequency than that of the first radio frequency electrical power, andwherein said controller determines the value of the applied DC voltage such as not to affect a plasma generated in the processing space.

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