PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND STORAGE MEDIUM
First Claim
1. A plasma processing apparatus comprising:
- a substrate processing chamber that has therein a processing space into which a substrate is transferred and is configured to carry out plasma processing on the substrate in the processing space;
a first electrode that is disposed in said substrate processing chamber and is connected to both a first radio frequency power source and a second radio frequency power source;
a second electrode that has an exposed portion exposed to the processing space and is electrically insulated from said substrate processing chamber and said first electrode, said second electrode being connected to a DC power source; and
a controller configured to control a value of a DC voltage applied to said second electrode,wherein the DC voltage applies the DC voltage to said second electrode while, to said first electrode, the first radio frequency power source supplies a first radio frequency electrical power and the second radio frequency power source supplies a second radio frequency electrical power having a lower frequency than that of the first radio frequency electrical power, andwherein said controller determines the value of the applied DC voltage such as not to affect a plasma generated in the processing space.
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Accused Products
Abstract
A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.
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Citations
5 Claims
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1. A plasma processing apparatus comprising:
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a substrate processing chamber that has therein a processing space into which a substrate is transferred and is configured to carry out plasma processing on the substrate in the processing space; a first electrode that is disposed in said substrate processing chamber and is connected to both a first radio frequency power source and a second radio frequency power source; a second electrode that has an exposed portion exposed to the processing space and is electrically insulated from said substrate processing chamber and said first electrode, said second electrode being connected to a DC power source; and a controller configured to control a value of a DC voltage applied to said second electrode, wherein the DC voltage applies the DC voltage to said second electrode while, to said first electrode, the first radio frequency power source supplies a first radio frequency electrical power and the second radio frequency power source supplies a second radio frequency electrical power having a lower frequency than that of the first radio frequency electrical power, and wherein said controller determines the value of the applied DC voltage such as not to affect a plasma generated in the processing space. - View Dependent Claims (2, 3, 4, 5)
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Specification