SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor device comprising:
- a gate electrode layer;
a gate insulating layer over the gate electrode layer;
an oxide semiconductor layer over the gate insulating layer;
a source electrode layer and a drain electrode layer over the oxide semiconductor layer; and
an insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer and in contact with part of the oxide semiconductor layer,wherein at least one of the gate insulating layer and the insulating layer contains a halogen element.
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Accused Products
Abstract
An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H2O) is eliminated from an oxide semiconductor layer with use of a halogen element typified by fluorine or chlorine, so that the impurity concentration in the oxide semiconductor layer is reduced. A gate insulating layer and/or an insulating layer provided in contact with the oxide semiconductor layer can be formed to contain a halogen element. In addition, a halogen element may be attached to the oxide semiconductor layer through plasma treatment under an atmosphere of a gas containing a halogen element.
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Citations
15 Claims
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1. A semiconductor device comprising:
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a gate electrode layer; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; and an insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer and in contact with part of the oxide semiconductor layer, wherein at least one of the gate insulating layer and the insulating layer contains a halogen element. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over a substrate; introducing the substrate into a first treatment chamber, wherein a halogen element is contained in the first treatment chamber with use of a gas containing the halogen element; forming a gate insulating layer over the gate electrode layer, the gate insulating layer containing the halogen element; introducing the substrate into a second treatment chamber; introducing a sputtering gas into the second treatment chamber; forming an oxide semiconductor layer over the gate insulating layer; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; introducing the substrate into a third treatment chamber; introducing a sputtering gas containing oxygen into the third treatment chamber; forming an insulating layer over the oxide semiconductor layer; and heating the substrate to diffuse hydrogen or moisture included in the oxide semiconductor layer into the gate insulating layer. - View Dependent Claims (8, 9)
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10. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over a substrate; forming a gate insulating layer over the gate electrode layer; introducing the substrate into a first treatment chamber; introducing a sputtering gas into the first treatment chamber; forming an oxide semiconductor layer over the gate insulating layer; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; introducing the substrate into a second treatment chamber; introducing a sputtering gas containing oxygen and a halogen element into the second treatment chamber; forming an insulating layer over the oxide semiconductor layer, the insulating layer containing the halogen element; and heating the substrate to diffuse hydrogen or moisture included in the oxide semiconductor layer into the insulating layer. - View Dependent Claims (11, 12)
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13. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over a substrate; forming a gate insulating layer over the gate electrode layer; introducing the substrate into a first treatment chamber; introducing a sputtering gas into the first treatment chamber; forming an oxide semiconductor layer over the gate insulating layer; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; performing plasma treatment on the oxide semiconductor layer under an atmosphere of a gas containing a halogen element; introducing the substrate into a second treatment chamber; introducing a sputtering gas containing oxygen into the second treatment chamber; forming an insulating layer over the oxide semiconductor layer; and heating the substrate to diffuse hydrogen or moisture included in the oxide semiconductor layer into the insulating layer. - View Dependent Claims (14, 15)
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Specification