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SEMICONDUCTOR DEVICE

  • US 20110089417A1
  • Filed: 10/18/2010
  • Published: 04/21/2011
  • Est. Priority Date: 10/21/2009
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a first transistor comprising a channel formation region in a substrate containing a semiconductor material, impurity regions formed with the channel formation region interposed therebetween, a first gate insulating layer over the channel formation region, a first gate electrode over the first gate insulating layer, and a first source electrode and a first drain electrode which are electrically connected to the impurity regions; and

    a second transistor comprising a second gate electrode over the substrate containing the semiconductor material, a second gate insulating layer over the second gate electrode, an oxide semiconductor layer over the second gate insulating layer, and a second source electrode and a second drain electrode which are electrically connected to the oxide semiconductor layer.

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