SEMICONDUCTOR DEVICE

• US 20110089417A1
• Filed: 10/18/2010
• Published: 04/21/2011
• Est. Priority Date: 10/21/2009
• Status: Abandoned Application

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei, KOYAMA, Jun, IMAI, Keitaro
• Application Number:
  US12/906,565
• Publication Number:
  US 20110089417A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/1207 combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An objet of the present invention is to provide a semiconductor device with a new structure. Disclosed is a semiconductor device including a first transistor which includes a channel formation region on a substrate containing a semiconductor material, impurity regions formed with the channel formation region interposed therebetween, a first gate insulating layer over the channel formation region, a first gate electrode over the first gate insulating layer, and a first source electrode and a first drain electrode which are electrically connected to the impurity region; and a second transistor which includes a second gate electrode over the substrate containing a semiconductor material, a second gate insulating layer over the second gate electrode, an oxide semiconductor layer over the second gate insulating layer, and a second source electrode and a second drain electrode which are electrically connected to the oxide semiconductor layer.

Claims

1. A semiconductor device comprising:

a first transistor comprising a channel formation region in a substrate containing a semiconductor material, impurity regions formed with the channel formation region interposed therebetween, a first gate insulating layer over the channel formation region, a first gate electrode over the first gate insulating layer, and a first source electrode and a first drain electrode which are electrically connected to the impurity regions; and

a second transistor comprising a second gate electrode over the substrate containing the semiconductor material, a second gate insulating layer over the second gate electrode, an oxide semiconductor layer over the second gate insulating layer, and a second source electrode and a second drain electrode which are electrically connected to the oxide semiconductor layer.

2. The semiconductor device according to claim 1,

wherein the first gate electrode and the second gate electrode are electrically connected to each other, and

wherein one of the first source electrode and the first drain electrode is electrically connected to one of the second source electrode and the second drain electrode.

3. The semiconductor device according to claim 1,

wherein the first transistor is a p-type transistor;

and

wherein the second transistor is an n-type transistor.

4. The semiconductor device according to claim 1, wherein the first gate electrode is electrically connected to one of the second source electrode and the second drain electrode.

5. The semiconductor device according to claim 1, wherein the substrate containing the semiconductor material is a single crystal semiconductor substrate or an SOI substrate.

6. The semiconductor device according to claim 1, wherein the semiconductor material is silicon.

7. The semiconductor device according to claim 1, wherein the oxide semiconductor layer contains an In—

Ga—

Zn—

O based oxide semiconductor material.

8. The semiconductor device according to claim 1, wherein the oxide semiconductor layer contains an In₂Ga₂ZnO₇ crystal.

9. The semiconductor device according to claim 1, wherein a hydrogen concentration of the oxide semiconductor layer is 5×

10¹⁹ atoms/cm³ or less.

10. The semiconductor device according to claim 1, wherein an off-state current of the second transistor is 1×

10<sup>−

13</sup> A or less.

11. The semiconductor device according to claim 1, wherein the second transistor is formed over an insulating layer covering the first transistor.

12. A semiconductor device comprising:

a first transistor formed on a substrate, a channel formation region of the first transistor comprising a semiconductor material present in the substrate; and

a second transistor over the substrate, a channel formation region of the second transistor comprising an oxide semiconductor layer.

13. A semiconductor device according to claim 12, wherein the first transistor and the second transistor are electrically connected.

14. The semiconductor device according to claim 12,

wherein a first gate electrode of the first transistor and a second gate electrode of the second transistor are electrically connected to each other, and

wherein one of a first source electrode and a first drain electrode of the first transistor is electrically connected to one of a second source electrode and a second drain electrode of the second transistor.

15. The semiconductor device according to claim 12,

wherein the first transistor is a p-type transistor;

and

wherein the second transistor is an n-type transistor.

16. The semiconductor device according to claim 14, wherein the first gate electrode is electrically connected to one of the second source electrode and the second drain electrode.

17. The semiconductor device according to claim 12, wherein the substrate containing the semiconductor material is a single crystal semiconductor substrate or an SOI substrate.

18. The semiconductor device according to claim 12, wherein the semiconductor material is silicon.

19. The semiconductor device according to claim 12, wherein the oxide semiconductor layer contains an In—

Ga—

Zn—

O based oxide semiconductor material.

20. The semiconductor device according to claim 12, wherein the oxide semiconductor layer contains an In₂Ga₂ZnO₇ crystal.

21. The semiconductor device according to claim 12, wherein a hydrogen concentration of the oxide semiconductor layer is 5×

10¹⁹ atoms/cm³ or less.

22. The semiconductor device according to claim 12, wherein an off-state current of the second transistor is 1×

10<sup>−

13</sup> A or less.

23. The semiconductor device according to claim 12, wherein the second transistor is formed over an insulating layer covering the first transistor.