SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME
First Claim
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1. A semiconductor light-emitting device, comprising:
- an electrode layer;
a light-emitting structure disposed above the electrode layer, the light-emitting structure comprising a first conductive type semiconductor layer, an active layer disposed on the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed on the active layer; and
an electrode disposed on the light-emitting structure, wherein the electrode comprises;
an ohmic contact layer that contacts a top surface of the second conductive type semiconductor layer;
a first barrier layer disposed on the ohmic contact layer;
a conductive layer comprising copper disposed on the first barrier layer;
a second barrier layer disposed on the conductive layer; and
a bonding layer disposed on the second barrier layer.
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Abstract
A semiconductor light-emitting device is provided that may include an electrode layer, a light-emitting structure including a compound semiconductor layer on the electrode layer, and an electrode on the light-emitting structure, wherein the electrode includes an ohmic contact layer that contacts the compound semiconductor layer, a first barrier layer on the ohmic contact layer, a conductive layer including copper on the first barrier layer, a second barrier layer on the conductive layer, and a bonding layer on the second barrier layer.
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Citations
20 Claims
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1. A semiconductor light-emitting device, comprising:
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an electrode layer; a light-emitting structure disposed above the electrode layer, the light-emitting structure comprising a first conductive type semiconductor layer, an active layer disposed on the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed on the active layer; and an electrode disposed on the light-emitting structure, wherein the electrode comprises; an ohmic contact layer that contacts a top surface of the second conductive type semiconductor layer; a first barrier layer disposed on the ohmic contact layer; a conductive layer comprising copper disposed on the first barrier layer; a second barrier layer disposed on the conductive layer; and a bonding layer disposed on the second barrier layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A semiconductor light-emitting device, comprising:
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an electrode layer; a light-emitting structure disposed above the electrode layer, the light-emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer, an active layer disposed on the second conductive type semiconductor layer, and a third semiconductor layer of the first conductive type disposed on the active layer; and an electrode disposed on the light-emitting structure, wherein the electrode comprises; an ohmic contact layer that contacts a top surface of the third semiconductor layer; a first barrier layer disposed on the ohmic contact layer; a conductive layer comprising copper disposed on the first barrier layer; a second barrier layer disposed on the conductive layer; and a bonding layer disposed on the second barrier layer. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification