SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME

• US 20110089452A1
• Filed: 06/10/2010
• Published: 04/21/2011
• Est. Priority Date: 10/15/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Song, June O, Moon, Ji Hyung, Choi, Kwang Ki, Lee, Sang Youl, Jeong, Hwan Hee
• Granted Patent: US 8,513,679 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, a reflective layer, a conductive support member, and a channel layer. The light-emitting structure may include a plurality of compound semiconductor layers. The electrode may be disposed on the compound semiconductor layer. The reflective layer may be disposed under the compound semiconductor layer. The conductive support member may be disposed under the reflective layer. The channel layer may be disposed along a bottom edge of the compound semiconductor layer.

Claims

1. A semiconductor light-emitting device, comprising:

a conductive support member;

a reflective layer disposed above the conductive support member;

a light-emitting structure disposed above and in contact with the reflective layer, the light-emitting structure comprising a first conductive type semiconductor layer, an active layer disposed on the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed on the active layer;

an electrode disposed on the light emitting structure; and

a channel layer disposed along a bottom edge of the light emitting structure.

2. The semiconductor light-emitting device according to claim 1, wherein the reflective layer ohmic-contacts a bottom surface of the light emitting structure and includes a reflective metal.

3. The semiconductor light-emitting device according to claim 1, wherein an inner end of the channel layer contacts an outer end of the reflective layer.

4. The semiconductor light-emitting device according to claim 1, wherein the reflective layer extends to partially underlie a bottom surface of the channel layer.

5. The semiconductor light-emitting device according to claim 4, wherein the reflective layer is formed under a portion of the bottom surface of the channel layer to a width less than about 80% of a width of the channel layer.

6. The semiconductor light-emitting device according to claim 1, further comprising a capping layer that contacts a bottom surface of the channel layer.

7. The semiconductor light-emitting device according to claim 6, wherein the reflective layer extends to partially underlie a bottom surface of the capping layer.

8. The semiconductor light-emitting device according to claim 6, wherein the reflective layer extends to underlie an entire bottom surface of the capping layer.

9. The semiconductor light-emitting device according to claim 6, wherein an inner end of the capping layer is formed to correspond to an inner end of the channel layer.

10. The semiconductor light-emitting device according to claim 6, wherein an inner end of the capping layer contacts a bottom surface of the light-emitting structure.

11. The semiconductor light-emitting device according to claim 6, wherein the capping layer is formed of at least one selected from the group consisting of Ti, Ni, Pt, Pd, Cu, Al, Ir, and Rh.

12. The semiconductor light-emitting device according to claim 1, further comprising a current blocking layer that corresponds to the electrode.

13. The semiconductor light-emitting device according to claim 12, wherein the current blocking layer is formed on one of the reflective layer and the conductive support member.

14. The semiconductor light-emitting device according to claim 12, wherein the current blocking layer is formed of at least one selected from the group consisting of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, ZnO, SiO₂, SiO_x, SiO_xN_y, Si₃N₄, Al₂O₃, and TiO₂.

15. The semiconductor light-emitting device according to claim 1, further comprising an adhesion layer between the reflective layer and the conductive support member.

16. The semiconductor light-emitting device according to claim 1, wherein the channel layer includes at least one of transparent nitride, transparent oxide, or a transparent insulating material.

17. The semiconductor light-emitting device according to claim 1, wherein the channel layer is formed of at least one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), SiO₂, SiO_x, SiO_xN_y, Si₃N₄, Al₂O₃, and TiO₂.

18. The semiconductor light-emitting device according to claim 1, further comprising an insulating layer disposed along an outer edge of the light-emitting structure.

19. The semiconductor light-emitting device according to claim 1, further comprising a roughness pattern formed on the light-emitting structure.

20. The semiconductor light-emitting device according to claim 1, comprising a roughness pattern formed in at least one of a top surface or a bottom surface of the channel layer.

21. The semiconductor light-emitting device according to claim 1, wherein a roughness pattern is formed in a bottom surface of the channel layer, and the roughness pattern is formed to a thickness equal to or smaller than a thickness of the channel layer.

22. The semiconductor light-emitting device according to claim 1, wherein a roughness pattern is formed in a top surface of the channel layer and an inner portion of the roughness pattern contacts a bottom outer portion of the light-emitting structure.

23. The semiconductor light-emitting device according to claim 1, wherein a roughness pattern is formed in a surface of at least one of the channel layer or the reflective layer, and the roughness pattern includes at least one of a sawtooth wave pattern, a square wave pattern, a convexo-concave pattern, or a stripe pattern.

24. The semiconductor light-emitting device according to claim 1, wherein the light-emitting structure includes at least one of a P-N junction, a N-P junction, a P-N-P junction, and a N-P-N junction using a Group III-V compound semiconductor.

25. A semiconductor light-emitting device, comprising:

a conductive support member;

a reflective layer disposed on the conductive support member;

an ohmic layer disposed on the reflective layer;

a light-emitting structure disposed above and in contact with the ohmic layer, the light-emitting structure comprising a first conductive type semiconductor layer, an active layer disposed on the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed on the active layer;

an electrode disposed on the light emitting structure; and

a channel layer disposed along a bottom edge of the light emitting structure.

26. The semiconductor light-emitting device according to claim 25, wherein the ohmic layer extends to partially underlie a bottom surface of the channel layer.

27. The semiconductor light-emitting device according to claim 25, wherein the ohmic layer extends to underlie an entire bottom surface of the channel layer.

28. The semiconductor light-emitting device according to claim 27, wherein the reflective layer extends to partially underlie a bottom surface of the ohmic layer.

29. The semiconductor light-emitting device according to claim 27, wherein the reflective layer extends to underlie an entire bottom surface of the ohmic layer.

30. The semiconductor light-emitting device of claim 25, further comprising a capping layer disposed underneath the channel layer, wherein the capping layer is formed between the ohmic layer and the reflective layer.

31. The semiconductor light-emitting device of claim 30, wherein an inner end of the capping layer extends upward toward the light-emitting structure.

32. The semiconductor light-emitting device of claim 30, wherein a portion of the capping layer contacts a bottom surface of the channel layer and a portion of the capping layer contacts the ohmic layer.

33. The semiconductor light-emitting device according to claim 30, wherein the reflective layer extends to partially underlie a bottom surface of the capping layer.

34. The semiconductor light-emitting device according to claim 30, wherein the reflective layer extends to underlie an entire bottom surface of the capping layer.

35. The semiconductor light-emitting device of claim 25, wherein the ohmic layer is formed of a conductive oxide material selected from the group consisting of ITO, IZO, IZTO, IAZO, IGZO, AZO, GZO, and a combination thereof.

36. The semiconductor light-emitting device of claim 25, further comprising a roughness pattern formed in the ohmic layer.