Light Emitting Diode Apparatus and Manufacturing Method Thereof
First Claim
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1. A LED apparatus, comprisinga lead frame;
- at least one group of AC-driven micro-LED chips;
at least one group of DC-driven LED chips; and
at least one wavelength conversion phosphor material for absorbing radiation emission of the chips;
wherein the group of the AC-driven micro-LED chips and the group of DC-driven LED chips are individually mounted onto the lead frame and connected by a conductive wire to form the LED apparatus capable of being driven by AC power source, the wavelength conversion phosphor material absorbs a part of the radiation emission of the chips thereby converting a spectral region thereof to have a different peak wavelength.
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Abstract
The present invention discloses a light emitting diode apparatus and a manufacturing method thereof, and more particularly to provide an AC-driven white light emitting diode apparatus comprising a plurality of groups of the AC-driven light emitting diode chips with different emission wavelengths and a plurality of groups of the DC-driven light emitting diode chips with different emission wavelengths. The AC-driven white light emitting diode apparatus manufactured by the disclosed method has the properties of high color rendering, high light emitting efficiency, and stable chromaticity coordinate.
16 Citations
22 Claims
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1. A LED apparatus, comprising
a lead frame; -
at least one group of AC-driven micro-LED chips; at least one group of DC-driven LED chips; and at least one wavelength conversion phosphor material for absorbing radiation emission of the chips; wherein the group of the AC-driven micro-LED chips and the group of DC-driven LED chips are individually mounted onto the lead frame and connected by a conductive wire to form the LED apparatus capable of being driven by AC power source, the wavelength conversion phosphor material absorbs a part of the radiation emission of the chips thereby converting a spectral region thereof to have a different peak wavelength. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A LED apparatus, comprising
a lead frame; -
at least one group of AlInGaN-based LED chips; at least one group of InGaPN-based LED chips; and at least one wavelength conversion phosphor material disposing on the at least one group of AlInGaN-based LED chips for absorbing radiation emission therefrom; wherein the group of the AlInGaN-based LED chips and the group of the InGaPN-based LED chips are individually mounted onto the lead frame and connected by a conductive wire to form the LED apparatus capable of being driven by AC power source, the wavelength conversion phosphor material absorbs a part of the radiation emission from the groups of the AlInGaN-based LED chips thereby converting a spectral region thereof to have a different peak wavelength. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A LED apparatus manufacturing method, comprising the steps of:
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providing a lead frame; mounting at least one group of AC-driven micro-LED chips and at least one group of DC-driven LED chips on the lead frame; electrically connecting the groups of the AC-driven micro-LED chips and the DC-driven LED chips; and providing a mixed resin comprising at least one wavelength conversion phosphor material formed over the groups of LED chips. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22)
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Specification