SIGNAL TRANSMISSION CIRCUIT

• US 20110090000A1
• Filed: 10/20/2010
• Published: 04/21/2011
• Est. Priority Date: 10/21/2009
• Status: Abandoned Application

• Current Assignee: Elpida Memory Incorporated (Micron Technology, Inc.)
• Original Assignee: Elpida Memory Incorporated (Micron Technology, Inc.)
• Inventors: TOMINAGA, Satoshi, MATSUI, Yoshinori
• Application Number:
  US12/908,563
• Publication Number:
  US 20110090000A1
• Time in Patent Office: Days
• US Class Current: 327/540
• CPC Class Codes: H03K 19/0016 by using a control or a clock signal, e.g. in order to apply power supply
• CPC Class Codes: H03K 19/00384 in field effect transistor circuits
• CPC Class Codes: H03K 19/01707 in asynchronous circuits

Abstract

To provide an inverter including first and second transistors connected in series between first and second power supply lines, a source transistor that is provided between the first power supply line and the first transistor and is conductive based on a control signal, and a load transistor that serves as a load circuit provided between the second power supply line and the second transistor. According to the present invention, because a difference between a load between the first power supply line and the first transistor and a load between the second power supply line and the second transistor is reduced, a difference between a signal propagation rate at which an input signal supplied to the inverter changes from a low level to a high level and a signal propagation rate at which the input signal changes from the high level to the low level is reduced.

Claims

1. A semiconductor device comprising:

first and second power supply lines;

a first logical circuit including a first transistor of a first conductive type and a second transistor of a second conductive type, the first and second transistors being connected in series between the first and second power supply lines;

a first source transistor of the first conductive type provided between the first power supply line and the first transistor, the first source transistor being controlled based on a first control signal; and

a first load circuit provided between the second power supply line and the second transistor.

2. The semiconductor device as claimed in claim 1, wherein the first load circuit includes a load transistor of the second conductive type that is fixed to an on state.

3. The semiconductor device as claimed in claim 1, wherein a load amount of the first source transistor in an on state is substantially equal to a load amount of the first load circuit.

4. The semiconductor device as claimed in claim 1, wherein

the first source transistor is turned on when the first control signal is in a first logical level, thereby the first logical circuit generates an output signal according to a logical level of an input signal, and

the first source transistor is turned off when the first control signal is in a second logical level, thereby the output signal from the first logical circuit is fixed to a predetermined logical level.

5. The semiconductor device as claimed in claim 1, further comprising:

a second logical circuit to which an output signal from the first logical circuit is supplied, and that includes a third transistor of the first conductive type and a fourth transistor of the second conductive type, the third and fourth transistors being connected in series between the first and second power supply lines;

a second load circuit provided between the first power supply line and the third transistor; and

a second source transistor provided between the second power supply line and the fourth transistor, the second source transistor being controlled based on a second control signal.

6. The semiconductor device as claimed in claim 5, wherein the first control signal and the second control signal are complementary to each other.

9. The semiconductor device as claimed in claim 5, wherein a lead amount of the second load circuit is substantially equal to a load amount of the first source transistor in an on state.

10. The semiconductor device as claimed in claim 9, wherein the second load circuit and the first source transistor have the second conductive type and substantially identical in characteristics.

11. The semiconductor device as claimed in claim 1, further comprising a flip-flop circuit to which an output signal from the first logical circuit is supplied.

7. The semiconductor device as claimed in claim wherein a load amount of the first load circuit is substantially equal to a load amount of the second source transistor in an on state.

8. The semiconductor device as claimed in claim 7, wherein the first load circuit and the second source transistor have the first conductive type and substantially identical in characteristics.

12. A semiconductor device comprising:

a logical circuit to which an input signal is supplied, a logical level of the input signal changing in an active state and being fixed to one of logical levels in a standby state;

a first power supply line that supplies a first operating potential to the logical circuit;

a second power supply line that supplies a second operating potential to the logical circuit;

a source transistor connected between the logical circuit and the first power supply line, the source transistor being turned on in the active state and turned off in the standby state; and

a load transistor connected between the logical circuit and the second power supply line, the load transistor being fixed to an on state in both the active state and the standby state.