ANALOG CIRCUIT AND SEMICONDUCTOR DEVICE
First Claim
Patent Images
1. An analog circuit comprising:
- a reference transistor;
a mirror transistor; and
a detector,wherein the reference transistor is electrically connected to the detector,wherein a drain and a gate of the reference transistor are electrically connected to each other,wherein the gate of the reference transistor is electrically connected to a gate of the mirror transistor, andwherein the reference transistor and the mirror transistor include an oxide semiconductor having a hydrogen concentration of 5×
1019 atoms/cm3 or lower.
1 Assignment
0 Petitions
Accused Products
Abstract
An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.
-
Citations
12 Claims
-
1. An analog circuit comprising:
-
a reference transistor; a mirror transistor; and a detector, wherein the reference transistor is electrically connected to the detector, wherein a drain and a gate of the reference transistor are electrically connected to each other, wherein the gate of the reference transistor is electrically connected to a gate of the mirror transistor, and wherein the reference transistor and the mirror transistor include an oxide semiconductor having a hydrogen concentration of 5×
1019 atoms/cm3 or lower. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. An analog circuit comprising:
-
a first thin film transistor having a first terminal which is electrically connected to a high potential side power supply; a second thin film transistor having a first terminal which is electrically connected to the high potential side power supply; and a detector between the high potential side power supply and the first terminal of the first thin film transistor, wherein a gate of the first thin film transistor is electrically connected to a point between the detector and the first terminal of the first thin film transistor, wherein a gate of the second thin film transistor is electrically connected to the gate of the first thin film transistor, wherein a second terminal of the first thin film transistor and a second terminal of the second thin film transistor are electrically connected to a low potential side power supply, and wherein the first thin film transistor and the second thin film transistor include an oxide semiconductor having a hydrogen concentration of 5×
1019 atoms/cm3 or lower. - View Dependent Claims (8, 9, 10, 11, 12)
-
Specification