SYSTEM COMPRISING A SEMICONDUCTOR DEVICE AND STRUCTURE
First Claim
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1. A method of manufacturing a semiconductor wafer, the method comprising:
- providing a base wafer comprising a semiconductor substrate and metal layers;
transferring a first mono-crystalline layer on top of said metal layers, andprocessing said first mono-crystalline layer to define substantially horizontally oriented first transistors.
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Abstract
A semiconductor device includes a first mono-crystallized layer including first transistors, and a first metal layer forming at least a portion of connections between the first transistors; and a second layer including second transistors, the second transistors including mono-crystalline material, the second layer overlying the first metal layer, wherein the first metal layer includes aluminum or copper, and wherein the second layer is less than one micron in thickness and includes logic cells.
172 Citations
37 Claims
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1. A method of manufacturing a semiconductor wafer, the method comprising:
providing a base wafer comprising a semiconductor substrate and metal layers; transferring a first mono-crystalline layer on top of said metal layers, and processing said first mono-crystalline layer to define substantially horizontally oriented first transistors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of manufacturing a semiconductor wafer, the method comprising:
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providing a base wafer comprising a semiconductor substrate and metal layers; transferring a first mono-crystalline layer on top of said metal layers, and processing said first mono-crystalline layer to define first transistors, wherein said processing comprises at least two etch steps respectively defining an isolation for said transistors and defining gates of said first transistors. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A method of manufacturing a semiconductor wafer, the method comprising:
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providing a base wafer comprising a semiconductor substrate and metal layers; transferring first mono-crystalline layer on top of said metal layers, and processing said first mono-crystalline layer to define first transistors, said processing comprises connecting simultaneously drains and sources of said first transistors. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37)
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Specification