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SYSTEM COMPRISING A SEMICONDUCTOR DEVICE AND STRUCTURE

  • US 20110092030A1
  • Filed: 12/16/2010
  • Published: 04/21/2011
  • Est. Priority Date: 04/14/2009
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor wafer, the method comprising:

  • providing a base wafer comprising a semiconductor substrate and metal layers;

    transferring a first mono-crystalline layer on top of said metal layers, andprocessing said first mono-crystalline layer to define substantially horizontally oriented first transistors.

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