Light emitting device
First Claim
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1. A light emitting device comprising:
- a semiconductor light emitting diode which comprises a first nitride semiconductor layer of an n-type, a second nitride semiconductor layer of a p-type, and a first active layer between the first and second nitride semiconductor layers; and
a nano light emitting diode array which comprises a plurality of nano light emitting diodes on the semiconductor light emitting diode.
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Abstract
A light emitting device may include a semiconductor light emitting diode which may include a first nitride semiconductor layer doped as an n-type, a second nitride semiconductor layer doped as a p-type, and a first active layer provided between the first and second nitride semiconductor layers, and a nano light emitting diode array in which a plurality of nano light emitting diodes may be arranged on the semiconductor light emitting diode so as to be separated from each other.
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Citations
17 Claims
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1. A light emitting device comprising:
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a semiconductor light emitting diode which comprises a first nitride semiconductor layer of an n-type, a second nitride semiconductor layer of a p-type, and a first active layer between the first and second nitride semiconductor layers; and a nano light emitting diode array which comprises a plurality of nano light emitting diodes on the semiconductor light emitting diode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification