Display Device and Thin Film Transistor Array Substrate and Thin Film Transistor thereof
First Claim
1. A thin film transistor, comprising:
- a gate electrode disposed on a first substrate;
a gate insulating layer disposed on the first substrate and covered the gate electrode;
an oxide semiconductor layer conformably disposed above the gate insulating layer and has a channel region located above the gate electrode;
a source electrode disposed above the gate insulating layer and located at one side of the channel region; and
a drain electrode disposed above the gate insulating layer and located at another side of the channel region.
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Accused Products
Abstract
A display device including a thin film transistor array substrate, transparent electrode substrate and a display medium layer disposed therebetween is provided. The thin film transistor array substrate includes a plurality of thin film transistors with an oxide semiconductor layer respectively. In each thin film transistor, a gate electrode and a gate insulating layer are disposed on a substrate sequentially and the gate electrode is covered by the gate insulating layer. The oxide semiconductor layer is conformably covering on the gate insulating layer and has a channel region located above the gate electrode. A source electrode and a drain electrode of each thin film transistor are disposed on the oxide semiconductor layer and at one side of the channel region respectively. Since the oxide semiconductor layer is made of transparent material, the patterning process of the oxide semiconductor layer can be omitted during the manufacturing process of the reflective display device. Thus, the cost and time-consumed of manufacturing process of the reflective display device can be reduced.
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Citations
29 Claims
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1. A thin film transistor, comprising:
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a gate electrode disposed on a first substrate; a gate insulating layer disposed on the first substrate and covered the gate electrode; an oxide semiconductor layer conformably disposed above the gate insulating layer and has a channel region located above the gate electrode; a source electrode disposed above the gate insulating layer and located at one side of the channel region; and a drain electrode disposed above the gate insulating layer and located at another side of the channel region. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A thin film transistor array substrate, comprising:
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a first substrate; a plurality of data lines disposed on the first substrate and parallel to each other; a plurality of scan lines disposed on the first substrate and intersect the data lines to define a plurality of pixel regions on the first substrate; a plurality of thin film transistors disposed within corresponding one of the pixel regions and electrically connected to the corresponding one of the data lines and corresponding one of the scan lines, each thin film transistor comprises; a gate electrode disposed on a first substrate; a gate insulating layer disposed on the first substrate and covered the gate electrode; an oxide semiconductor layer conformably disposed above the gate insulating layer and has a channel region located above the gate electrode; a source electrode disposed above the gate insulating layer and located at one side of the channel region; a drain electrode disposed above the gate insulating layer and located at another side of the channel region; a protective layer covered the first substrate and has a plurality of contact holes exposing a portion of corresponding drain electrode respectively; and a plurality of pixel electrodes respectively disposed within corresponding one of the pixel regions, each pixel electrode is correspondingly filled into one of the contact holes and electrically connected to the corresponding drain electrode. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A display device, comprising:
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a thin film transistor array substrate, comprising; a first substrate; a plurality of data lines disposed on the first substrate and parallel to each other; a plurality of scan lines disposed on the first substrate and substantially perpendicular to the data lines for defining a plurality of pixel regions on the first substrate; a plurality of thin film transistors disposed within corresponding one of the pixel regions and electrically connected to the corresponding one of the data lines and corresponding one of the scan lines, each thin film transistor comprises; a gate electrode disposed on a first substrate; a gate insulating layer disposed on the first substrate and covered the gate electrode; an oxide semiconductor layer conformably disposed above the gate insulating layer and has a channel region located above the gate electrode; a source electrode disposed above the gate insulating layer and located at one side of the channel region; a drain electrode disposed above the gate insulating layer and located at another side of the channel region; a protective layer covered the first substrate and has a plurality of contact holes exposing a portion of corresponding drain electrode respectively; a plurality of pixel electrodes respectively disposed within corresponding one of the pixel regions, each pixel electrode is correspondingly filled into one of the contact holes and electrically connected to the corresponding drain electrode; a transparent electrode substrate, comprising; a second substrate disposed above the thin film transistor array substrate; a transparent electrode disposed on the second substrate and between the thin film transistor array substrate and the second substrate; and a display medium layer disposed between the thin film transistor array substrate and the transparent electrode substrate. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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Specification