THIN FILM TRANSISTOR AND DISPLAY DEVICE
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Accused Products
Abstract
There is provided a thin film transistor capable of suppressing generation of a leak current in an oxide semiconductor film. A thin film transistor 1 includes a gate electrode 12 on a substrate 11, and includes a gate insulating film 13 so as to cover the gate electrode 12 and the substrate 11. An oxide semiconductor film 14 is formed in a region corresponding to the gate electrode 12 on the gate insulating film 13, and a source electrode 15A and a drain electrode 15B are provided with a predetermined interval in between on the oxide semiconductor film 14. A protective film 16 is formed over a whole surface of the substrate 11 so as to cover a channel region 14A of the oxide semiconductor film 14, the source electrode 15A, and the drain electrode 15B. The protective film 16 is composed of an aluminum oxide film, and this aluminum oxide film is formed by an atomic layer deposition method. An entry of hydrogen into the oxide semiconductor film 14 is suppressed by the protective film 16.
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Citations
28 Claims
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1-15. -15. (canceled)
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16. A thin film transistor comprising:
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a gate electrode; an oxide semiconductor film in which a channel region is formed corresponding to the gate electrode; a pair of electrodes of a source electrode and a drain electrode formed on the oxide semiconductor film; and a protective film provided so as to face the channel region of the oxide semiconductor film, wherein, the protective film contains an aluminum oxide film having a film thickness of 50 nm or less. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23)
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24. A method of manufacturing a thin film transistor comprising steps of:
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forming a gate electrode on a substrate; forming an oxide semiconductor film including a channel region corresponding to the gate electrode; forming a pair of electrodes of a source electrode and a drain electrode on the oxide semiconductor film; and forming a protective film so as to face the channel region of the oxide semiconductor film, wherein, the protective film is formed of a film that contains an aluminum oxide film having a film thickness of 50 nm or less. - View Dependent Claims (25, 26, 27)
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28. A display device including a display element, and a thin film transistor for driving the display element, the thin film transistor comprising:
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a gate electrode; an oxide semiconductor film in which a channel region is formed corresponding to the gate electrode; a pair of electrodes of a source electrode and a drain electrode formed on the oxide semiconductor film; and a protective film provided so as to face the channel region of the oxide semiconductor film, wherein the protective film contains an aluminum oxide film having a film thickness of 50 nm or less.
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Specification