THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DISPLAY DEVICE HAVING THE SAME

• US 20110095296A1
• Filed: 10/22/2010
• Published: 04/28/2011
• Est. Priority Date: 10/27/2009
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Group)
• Original Assignee: Samsung Mobile Display Company Limited (Samsung Group)
• Inventors: Moon, Sang-Ho, Park, Yong-Hwan, Cho, Kyu-Sik, Lee, Won-Kyu, Choo, Byoung-Kwon, Lee, Yun-Gyu, Shin, Min-Chul, Choi, Joon-Hoo, Choi, Bo-Kyung, Yang, Tae-Hoon
• Granted Patent: US 8,963,153 B2
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs

Abstract

A thin film transistor (TFT) and an organic light emitting display device having the same are disclosed. In one embodiment, a TFT includes a gate electrode formed on a substrate. A gate insulating layer is formed on the substrate having the gate electrode. An active layer is formed on the gate insulating layer. A source electrode is formed over the active layer. A drain electrode is formed to substantially surround at least three surfaces of the source electrode on the active layer.

Claims

1. A thin film transistor (TFT) comprising:

a substrate;

a gate electrode formed on the substrate;

a gate insulating layer formed on the substrate and the gate electrode;

an active layer formed on the gate insulating layer;

a source electrode formed over the active layer; and

a drain electrode formed to substantially surround at least three surfaces of the source electrode on the active layer.

2. The TFT according to claim 1, wherein the drain electrode has a or “

U”

shape, and wherein the or “

U”

shape surrounds a substantial portion of the source electrode.

3. The TFT according to claim 1, wherein the drain electrode comprises an edge portion, wherein the active layer comprises an edge portion, and wherein the edge portion of the drain electrode is substantially aligned with the edge portion of the active layer along a direction substantially perpendicular to the substrate.

4. The TFT according to claim 3, further comprising a protection layer formed on the active layer.

5. The TFT according to claim 4, wherein the protection layer overlaps with the source electrode and at least a portion of the drain electrode.

6. The TFT according to claim 4, wherein the protection layer overlaps with an edge portion of the source electrode and an edge portion of the drain electrode.

7. The TFT according to claim 1, further comprising an ohmic contact layer contacting and formed between the active layer and the drain electrode.

8. The TFT according to claim 7, wherein the ohmic contact layer is formed directly below the drain electrode.

9. The TFT according to claim 7, wherein the ohmic contact layer is formed directly below the source electrode.

10. The TFT according to claim 1, wherein the active layer is formed of low temperature poly silicon (LTPS) crystallized using a solid phase crystallization (SPC) method.

11. An organic light emitting display device comprising:

a first substrate comprising an organic light emitting element and a thin film transistor (TFT) formed thereon, wherein the organic light emitting element comprises i) first and second electrodes and ii) an organic light emitting layer interposed between the first and second electrodes, and wherein the TFT is configured to control operations of the organic light emitting element; and

a second substrate disposed opposite to the first substrate,

wherein the TFT comprises;

a gate electrode formed on the first substrate;

a gate insulating layer formed on the first substrate and the gate electrode;

an active layer formed on the gate insulating layer;

a source electrode formed over the active layer; and

a drain electrode formed to substantially surround at least three surfaces of the source electrode on the active layer.

12. The organic light emitting display device according to claim 11, wherein the drain electrode has a or “

U”

shape, and wherein the or “

U”

shape surrounds a substantial portion of the source electrode.

13. The organic light emitting display device according to claim 11, wherein the drain electrode comprises an edge portion, wherein the active layer comprises an edge portion, and wherein the edge portion of the drain electrode is substantially aligned with the edge portion of the active layer along a direction substantially perpendicular to the substrate.

14. The organic light emitting display device according to claim 11, further comprising a protection layer formed on the active layer.

15. The organic light emitting display device according to claim 11, wherein the protection layer overlaps with the source electrode and at least a portion of the drain electrode.

16. The organic light emitting display device according to claim 15, wherein the protection layer overlaps with an edge portion of the source electrode and an edge portion of the drain electrode.

17. The organic light emitting display device according to claim 11, further comprising an ohmic contact layer formed between the active layer and the drain electrode.

18. An organic light emitting display device comprising:

a first substrate;

a second substrate disposed opposite to the first substrate;

an organic light emitting element formed between the first and second substrates;

a gate electrode formed over the first substrate;

a gate insulating layer formed over the first substrate and the gate electrode;

an active layer formed on the gate insulating layer;

a source electrode formed over the active layer; and

at least two drain electrodes spaced apart from the source electrode and formed on opposite sides of the source electrode, wherein at least one of the drain electrodes substantially surrounds at least three surfaces of the source electrode, and wherein two of the three surfaces are opposing each other.

19. The organic light emitting display device according to claim 18, further comprising:

a planarization layer covering i) the source electrode, ii) the drain electrodes, iii) the active layer and iv) the gate insulating layer, wherein a via hole is defined in the planarization layer, and wherein the organic light emitting element is electrically connected to at least one of the drain electrodes through the via hole.