Semiconductor Device and Method of Manufacturing the Same
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Abstract
An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability.
The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15 V/min, there is no wrap around on the electrode, and film peeling can be prevented.
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Citations
66 Claims
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1-42. -42. (canceled)
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43. A semiconductor device including a capacitor comprising:
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a first electrode on an organic resin film; an oxide film at least on a portion of a surface of the first electrode; and a second electrode covering at least a portion of the oxide film. - View Dependent Claims (44, 45, 46, 47)
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- 48. An electrooptical device which loads the semiconductor device of claim 431 as a display medium.
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50. A semiconductor device including a capacitor comprising:
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an inorganic film over an organic resin film; a first electrode on the inorganic film; an oxide film at least on a portion of a surface of the first electrode; and a second electrode covering at least a portion of the oxide film. - View Dependent Claims (51, 52, 53, 54, 56, 57, 58)
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51-1. A semiconductor device according to claim 50, wherein the first electrode comprises a material capable of anodic oxidation.
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59. A semiconductor device comprising at least a pixel matrix circuit over a substrate, wherein a storage capacitor of the pixel matrix circuit comprises:
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a shielding film provided over an organic resin film; an oxide film of the shielding film; and a pixel electrode disposed on the oxide film. - View Dependent Claims (60, 61, 62, 63, 64, 65, 66)
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Specification