LIGHT EMITTING DEVICE PACKAGE

• US 20110095329A1
• Filed: 10/07/2010
• Published: 04/28/2011
• Est. Priority Date: 10/22/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Hwang, Jung Ha
• Granted Patent: US 8,395,180 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/12035 Zener diode
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Provided are a light emitting device package and a lighting system. The light emitting device package includes a light emitting device chip, at least one wire, and an encapsulating material. The light emitting device chip includes a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The wire is on the light emitting device chip. The encapsulating material is on the light emitting device chip out of the wire, and includes a phosphor. The wire is perpendicular to an upper surface of the light emitting device chip, at least up to a height of the encapsulating material.

Claims

1. A light emitting device package comprising:

a light emitting device chip comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers;

at least one wire attached to and projecting perpendicularly from an upper surface of the light emitting device chip; and

an encapsulating material on the light emitting device chip, wherein the encapsulating material comprises a phosphor, and wherein the height of an upper surface of the encapsulating material equal to or less than the height of the at least one wire.

2. The light emitting device package of claim 1, wherein the upper surface of the encapsulating material is substantially flat.

3. The light emitting device package of claim 1, wherein the encapsulating material has an upper concavo-convex surface.

4. The light emitting device package of claim 1 further comprising:

a plurality of wires attached to and projecting perpendicularly from the upper surface of the light emitting device chip, and wherein one or more of the wires are dummy wires.

5. The light emitting device package of claim 4, wherein the plurality of wires are disposed around the light emitting device chip.

6. The light emitting device package of claim 5, wherein the plurality of wires are in contact with a peripheral portion of the light emitting device chip.

7. The light emitting device package of claim 1, wherein there are plurality of wires on the light emitting device chip,

wherein the encapsulating material is on the light emitting device chip contained between the plurality of wires,

wherein at least one of the plurality of wires is a dummy wire.

8. The light emitting device package of claim 7, wherein the plurality of wires are disposed around the light emitting device chip, and wherein each of the plurality of wires is positioned opposite a corresponding one of the other wires.

9. The light emitting device package of claim 7, wherein the plurality of wires comprises two real wires and one or more dummy wires.

10. The light emitting device package of claim 7, wherein each of the plurality of wires is in contact with an outermost portion of the light emitting device chip.

11. The light emitting device package of claim 7, wherein each of the plurality of wires is substantially perpendicular to an upper surface of the light emitting device chip, and wherein the height of the encapsulating material is equal to or less than the height of each of the plurality of wires.

12. The light emitting device package of claim 7, wherein the encapsulating material has a substantially flat upper surface.

13. The light emitting device package of claim 1, wherein the wire is in contact with an outermost part of the light emitting device chip.

14. The light emitting device package of claim 13 further comprising:

a plurality of wires on the light emitting device chip, wherein the plurality of wires includes at least one dummy wire.

15. The light emitting device package of claim 13, wherein the at least one wire is perpendicular to an upper surface of the light emitting device chip, and wherein the height of the encapsulating material is equal to or less than the height of the at least one wire.