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Field Boosted Metal-Oxide-Semiconductor Field Effect Transistor

  • US 20110095359A1
  • Filed: 06/25/2010
  • Published: 04/28/2011
  • Est. Priority Date: 10/28/2009
  • Status: Active Grant
First Claim
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1. A trench metal-oxide-semiconductor field effect transistor (TMOSFET) comprising:

  • a drain region;

    a plurality of gate regions disposed above the drain region;

    a plurality of drift region disposed in mesas between the plurality of gate regions and above the drain region;

    a plurality of body regions disposed in the mesas, above the drift regions, and adjacent the gate regions;

    a plurality of source regions disposed in the mesas above the body region;

    a plurality of gate insulator regions disposed between the gate regions and the source regions, body regions, drift regions and drain region;

    wherein the width of the mesa is approximately 0.03 to 1.0 microns (μ

    m); and

    wherein a thickness of the gate insulator regions between the gate regions and the drain region is approximately 0.1 to 4.0 microns (μ

    m).

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