Field Boosted Metal-Oxide-Semiconductor Field Effect Transistor
First Claim
1. A trench metal-oxide-semiconductor field effect transistor (TMOSFET) comprising:
- a drain region;
a plurality of gate regions disposed above the drain region;
a plurality of drift region disposed in mesas between the plurality of gate regions and above the drain region;
a plurality of body regions disposed in the mesas, above the drift regions, and adjacent the gate regions;
a plurality of source regions disposed in the mesas above the body region;
a plurality of gate insulator regions disposed between the gate regions and the source regions, body regions, drift regions and drain region;
wherein the width of the mesa is approximately 0.03 to 1.0 microns (μ
m); and
wherein a thickness of the gate insulator regions between the gate regions and the drain region is approximately 0.1 to 4.0 microns (μ
m).
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Accused Products
Abstract
A trench metal-oxide-semiconductor field effect transistor (TMOSFET) includes a plurality of mesas disposed between a plurality of gate regions. Each mesa includes a drift region and a body region. The width of the mesa is in the order of quantum well dimension at the interface between the gate insulator regions and the body regions The TMOSFET also includes a plurality of gate insulator regions disposed between the gate regions and the body regions, drift regions, and drain region. The thickness of the gate insulator regions between the gate regions and the drain region results in a gate-to-drain electric field in an OFF-state that is substantially lateral aiding to deplete the charge in the drift regions.
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Citations
20 Claims
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1. A trench metal-oxide-semiconductor field effect transistor (TMOSFET) comprising:
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a drain region; a plurality of gate regions disposed above the drain region; a plurality of drift region disposed in mesas between the plurality of gate regions and above the drain region; a plurality of body regions disposed in the mesas, above the drift regions, and adjacent the gate regions; a plurality of source regions disposed in the mesas above the body region; a plurality of gate insulator regions disposed between the gate regions and the source regions, body regions, drift regions and drain region; wherein the width of the mesa is approximately 0.03 to 1.0 microns (μ
m); andwherein a thickness of the gate insulator regions between the gate regions and the drain region is approximately 0.1 to 4.0 microns (μ
m). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A trench metal-oxide-semiconductor field effect transistor (TMOSFET) comprising:
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a drain region; a plurality of mesas, each including a drift region and a body region, disposed between a plurality of gate regions, wherein the width of the mesa is in the order of quantum well dimension at the interface between the gate insulator regions and the body regions; and a plurality of gate insulator regions disposed between the gate regions and the body regions, drift regions, and drain region, wherein a thickness of the gate insulator regions between the gate regions and the drain region results in a gate-to-drain electric field in an OFF-state that is substantially lateral in the drift regions. - View Dependent Claims (14, 16, 17, 18, 19, 20)
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- 13. The trench metal-oxide-semiconductor field effect transistor (TMOSFET) of claimm 12, wherein the gate insulator regions comprise an oxide.
Specification