PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

• US 20110097516A1
• Filed: 01/05/2011
• Published: 04/28/2011
• Est. Priority Date: 07/11/2008
• Status: Abandoned Application

• Current Assignee: Sumitomo Heavy Industries Limited
• Original Assignee: Sumitomo Heavy Industries Limited
• Inventors: TANAKA, Masaru, MAKINO, Hiroyuki
• Application Number:
  US12/984,991
• Publication Number:
  US 20110097516A1
• Time in Patent Office: Days
• US Class Current: 427/569
• CPC Class Codes: C23C 16/4584 the substrate being rotated
• CPC Class Codes: C23C 16/505 using radio frequency discharges
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means
• CPC Class Codes: H01J 37/32706 Polarising the substrate
• CPC Class Codes: H01J 37/32733 Means for moving the material to be treated

Abstract

Provided is a plasma processing apparatus including: a plasma generator configured to generate plasma, and a conveyor configured to adjust a distance between a substrate and the plasma generator.

Claims

1. A plasma processing apparatus comprising:

a plasma generator configured to generate plasma; and

a conveyor configured to adjust a distance between a substrate and the plasma generator.

2. The plasma processing apparatus according to claim 1, further comprising:

a holder configured to hold the substrate; and

a biasing power source configured to apply a bias potential to the holder.

3. The plasma processing apparatus according to claim 2, wherein the conveyor is configured to adjust the distance between the substrate and the plasma generator so that a sheath surface of a sheath generated on the surface of the holder during a plasma process is located at a position where the density distribution of the plasma is uniform.

4. The plasma processing apparatus according to claim 2, wherein the conveyor is configured to adjust the distance between the substrate and the plasma generator based on a bias potential applied from the biasing power source to the holder.

5. The plasma processing apparatus according to claim 2, wherein the conveyor is configured to adjust the distance between the substrate and the plasma generator by moving the holder.

6. A plasma processing method comprising:

generating plasma by a plasma generator to perform a plasma process on a substrate; and

adjusting a distance between the substrate and the plasma generator.

7. The plasma processing method according to claim 6, wherein in adjusting the distance between the substrate and the plasma generator, the distance is adjusted so that a sheath surface of a sheath generated on a surface of a holder holding the substrate is located at a position where the density distribution of the plasma is uniform.

8. The plasma processing method according to claim 6, wherein in adjusting the distance between the substrate and the plasma generator, the distance is adjusted based on a bias potential applied to a holder holding the substrate.

9. The plasma processing method according to claim 6, wherein in adjusting the distance between the substrate and the plasma generator, the distance is adjusted by moving a holder holding the substrate.